Samsung electronics co., ltd. (20240321956). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321956 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation: The patent application describes an integrated circuit device with a unique design featuring a fin-type active region, nanosheets, gate line, source/drain region, and inner spacers.
- The device has a fin-type active region that protrudes from the substrate and extends horizontally.
- Nanosheets are placed on the fin-type active region, separated vertically, and surrounded by a gate line.
- The gate line includes sub-gate portions between the nanosheets and a main gate portion above the top layer of nanosheets.
- A source/drain region is located adjacent to the gate line and connected to the nanosheets.
- Inner spacers are positioned between the gate line and the source/drain region, with different shapes for those facing sub-gate portions and the main gate portion.
Key Features and Innovation:
- Fin-type active region design for improved performance.
- Use of nanosheets for enhanced functionality.
- Gate line configuration for precise control.
- Source/drain region placement for efficient connection.
- Inner spacers for optimal spacing and alignment.
Potential Applications:
- Advanced semiconductor devices.
- High-performance computing systems.
- Next-generation electronics.
Problems Solved:
- Improved integration and performance.
- Enhanced control and efficiency.
- Optimal spacing and alignment.
Benefits:
- Increased speed and efficiency.
- Enhanced functionality and reliability.
- Advanced design for future technology.
Commercial Applications:
- Semiconductor industry for cutting-edge devices.
- Electronics manufacturers for high-performance products.
- Research institutions for innovative projects.
Questions about the Technology: 1. How does the unique design of the fin-type active region contribute to the overall performance of the integrated circuit device? 2. What are the specific advantages of using nanosheets in this integrated circuit device design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology and integrated circuit design to understand the evolving landscape of this field.
Original Abstract Submitted
an integrated circuit device includes a fin-type active region that protrudes from a substrate and extends in a first horizontal direction, a plurality of nanosheets disposed on the fin-type active region and separated from each other in the vertical direction, a gate line that extends in a second horizontal direction and that surrounds the plurality of nanosheets on the fin-type active region, and includes respective sub-gate portions between the plurality of nanosheets and a main gate portion above the uppermost layer of the plurality of nanosheets, a source/drain region disposed on the fin-type active region, adjacent to the gate line, and connected to the plurality of nanosheets, and a plurality of inner spacers interposed between the gate line and the source/drain region. the shapes of first inner spacers that face the sub-gate portions differ from the shape of a second inner spacer that faces the main gate portion.
