Samsung electronics co., ltd. (20240321886). STACKED INTEGRATED CIRCUIT DEVICES simplified abstract
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STACKED INTEGRATED CIRCUIT DEVICES
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STACKED INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321886 titled 'STACKED INTEGRATED CIRCUIT DEVICES
The abstract describes a stacked integrated circuit device with multiple transistors arranged in different layers, including pull-up transistors, pull-down transistors, and pass-gate transistors, as well as contacts and gate contacts connecting various regions and electrodes.
- The device includes pull-up transistors in one layer, pull-down transistors in a different layer, and pass-gate transistors in either layer.
- Contacts electrically connect source/drain regions of different transistors to each other.
- Gate contacts connect gate electrodes of different transistors.
- An upper wire extends in a horizontal direction and connects the contacts and gate contacts.
Potential Applications: - This technology can be used in the design of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enables the integration of multiple transistors in a stacked configuration, optimizing space and performance. - Facilitates the connection of different transistor components within the device.
Benefits: - Enhanced functionality and compact design of integrated circuits. - Improved electrical connectivity and performance of semiconductor devices.
Commercial Applications: Title: Advanced Stacked Integrated Circuit Technology for Enhanced Performance This technology can be applied in the development of high-performance electronic devices such as smartphones, computers, and IoT devices, improving speed and efficiency.
Prior Art: Further research can be conducted on stacked integrated circuit designs and semiconductor device architectures to explore similar innovations in the field.
Frequently Updated Research: Researchers are continually exploring new methods to enhance the integration and performance of stacked integrated circuits in semiconductor devices.
Questions about Stacked Integrated Circuit Technology: 1. How does the arrangement of transistors in different layers impact the overall performance of the integrated circuit device? 2. What are the key challenges in implementing stacked integrated circuit technology in semiconductor devices?
Original Abstract Submitted
a stacked integrated circuit device includes a plurality of transistors including a pair of pull-up transistors in a first layer, a pair of pull-down transistors in a second layer that is at a different vertical level than the first layer, and a pair of pass-gate transistors in the first or second layer, a contact configured to electrically connect a source/drain region of one of the pull-up transistors, a source/drain region of one of the pull-down transistors, and a source/drain region of one of the pass-gate transistors to one another, a gate contact configured to connect a gate electrode of the other pull-up transistor to a gate electrode of the other pull-down transistor, and an upper wire on the contact and the gate contact, the upper wire extending in a first horizontal direction and being connected to the contact and the gate contact.
