Samsung electronics co., ltd. (20240321885). INTEGRATED CIRCUIT DEVICE simplified abstract
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INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321885 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation: The integrated circuit device described in the patent application includes two transistors with different conductivity types, each having a channel region and a source/drain region. The device also features contact structures that extend from above the source/drain regions and beyond the uppermost surfaces of the channel regions by specific vertical distances.
- The device includes a first transistor with a first conductivity type and a first contact structure with a certain length.
- There is a second transistor with a second conductivity type and a second contact structure that is longer than the first one.
- The first contact structure extends a certain vertical distance from above the first source/drain region, while the second contact structure extends a greater vertical distance from above the second source/drain region.
Potential Applications: 1. Semiconductor manufacturing 2. Integrated circuit design 3. Electronics industry
Problems Solved: 1. Efficient contact structures in integrated circuits 2. Improved performance of transistors 3. Enhanced connectivity in semiconductor devices
Benefits: 1. Better integration of transistors in circuits 2. Increased efficiency in electronic devices 3. Enhanced overall performance of integrated circuits
Commercial Applications: The technology described in the patent application could have significant commercial applications in the semiconductor industry, particularly in the development of advanced integrated circuits for various electronic devices.
Questions about the Technology: 1. How does the length of the contact structures impact the performance of the transistors? 2. What are the specific vertical distances mentioned in the patent application and how do they affect the functionality of the device?
Original Abstract Submitted
an integrated circuit device includes a first transistor comprising a first conductivity type, which includes a first channel region and a first source/drain region, a second transistor comprising a second conductivity type, which includes a second channel region and a second source/drain region, a first contact structure that contacts the first source/drain region and comprising a first length, and the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance, and a second contact structure that contacts the second source/drain region and having a second length that is greater than the first length, the second contact extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance, which is greater than the first vertical distance.
