Samsung electronics co., ltd. (20240321874). INTEGRATED CIRCUIT DEVICE simplified abstract

INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jeonghyeon Lee of Suwon-si (KR)

Hakjong Lee of Suwon-si (KR)

Yeonghan Gwon of Suwon-si (KR)

Hanyoung Song of Suwon-si (KR)

Subin Lee of Suwon-si (KR)

Junyoup Lee of Suwon-si (KR)

Hyunjun Lim of Suwon-si (KR)

Taeho Cha of Suwon-si (KR)

Seunghyeon Hong of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321874 titled 'INTEGRATED CIRCUIT DEVICE

The abstract describes an integrated circuit device with fin-type active regions, a gate line, a capping insulating layer, and a fin isolation insulating portion that includes an isolation insulating plug and an isolation insulating liner.

• The integrated circuit device includes a pair of collinear fin-type active regions on a substrate.
• A gate line is positioned on one of the fin-type active regions.
• A capping insulating layer covers the gate line.
• A fin isolation insulating portion passes through the capping insulating layer vertically between the pair of fin-type active regions.
• The fin isolation insulating portion consists of an isolation insulating plug with a first and second portion, and an isolation insulating liner surrounding the plug.
• The isolation insulating liner has an uppermost portion closer to the substrate than the top surface of the isolation insulating plug.

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry

Problems Solved: - Improved isolation between active regions - Enhanced performance of integrated circuits - Increased reliability of semiconductor devices

Benefits: - Higher efficiency in circuit operation - Reduced interference between components - Enhanced overall device performance

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Circuit Performance This technology can be utilized in the production of high-performance electronic devices, leading to faster and more reliable integrated circuits. The market implications include improved consumer electronics, telecommunications equipment, and industrial automation systems.

Questions about the technology: 1. How does the fin isolation insulating portion contribute to the overall performance of the integrated circuit device? - The fin isolation insulating portion enhances the isolation between active regions, reducing interference and improving the efficiency of the device. 2. What are the potential challenges in implementing this technology on a larger scale in semiconductor manufacturing? - Some challenges may include optimizing the manufacturing process for mass production and ensuring the reliability and consistency of the devices.

Original Abstract Submitted

an integrated circuit device includes a pair of fin-type active regions collinear with each other on a substrate, a gate line disposed on one of the fin-type active regions, a capping insulating layer that covers the gate line, and a fin isolation insulating portion that passes through the capping insulating layer in a vertical direction between the pair of fin-type active regions. the fin isolation insulating portion includes an isolation insulating plug that includes a first portion disposed between the pair of fin-type active regions and a second portion integrally connected to the first portion and that passes through the capping insulating layer in the vertical direction, and an isolation insulating liner that surrounds a bottom surface and a sidewall of the isolation insulating plug. the isolation insulating liner includes an uppermost portion that is closer to the substrate than a top surface of the isolation insulating plug.