Samsung electronics co., ltd. (20240321873). INTEGRATED CIRCUIT DEVICES simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Heonjong Shin of Suwon-si (KR)
Juneyoung Park of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321873 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with various components arranged in specific directions on a substrate.
- The device has device regions extending in one direction and gate electrodes extending in a perpendicular direction.
- Source/drain regions are located between pairs of gate electrodes.
- Gate cut regions cut the gate electrodes.
- Contact structures fill the gate cut regions.
Potential Applications: This technology can be used in the semiconductor industry for manufacturing advanced integrated circuits with improved performance and efficiency.
Problems Solved: This innovation addresses the need for more compact and efficient integrated circuit designs.
Benefits: The integrated circuit device offers enhanced functionality and performance in a smaller footprint, leading to improved overall system efficiency.
Commercial Applications: This technology has significant commercial applications in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Questions about the technology: 1. How does this integrated circuit device improve overall system efficiency? 2. What are the key advantages of using gate cut regions in the design of integrated circuits?
Original Abstract Submitted
an integrated circuit device, including a substrate having a plurality of device regions extending in a first horizontal direction, a plurality of gate electrodes on the plurality of device regions extending in a second horizontal direction that is orthogonal to the first horizontal direction, a plurality of source/drain regions between a pair of gate electrodes adjacent to each other in the first horizontal direction among the plurality of gate electrodes, the plurality of source/drain regions being on portions of the plurality of device regions, a plurality of gate cut regions cutting the plurality of gate electrodes and extending in the first horizontal direction, and a plurality of contact structures including a plurality of contact body portions and a plurality of contact finger portions, the plurality of contact body portions filling the plurality of gate cut regions and extending in the first horizontal direction.
