Samsung electronics co., ltd. (20240315055). MEMORY PACKAGE EXPANSION simplified abstract
Contents
MEMORY PACKAGE EXPANSION
Organization Name
Inventor(s)
Casey Glenn Thielen of Chandler AZ (US)
Douglas Joseph of Austin TX (US)
MEMORY PACKAGE EXPANSION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315055 titled 'MEMORY PACKAGE EXPANSION
The memory solution device described in the patent application consists of a logic die, a high-bandwidth memory, and a first memory die. The logic die, which can be a central processing unit or an accelerator, includes a first surface. The high-bandwidth memory die is located on the first surface at a first predetermined location, while the first memory die is located at a second predetermined location on the first surface, different from the high-bandwidth memory die.
- Logic die can be a central processing unit or an accelerator.
- High-bandwidth memory die is located on the first surface at a first predetermined location.
- First memory die is located on the first surface at a second predetermined location different from the high-bandwidth memory die.
- First memory die can be a read-only memory, random access memory, non-volatile memory, or a combination thereof.
Potential Applications: - High-performance computing systems - Data centers - Artificial intelligence applications - Gaming consoles
Problems Solved: - Increased memory bandwidth - Efficient data processing - Enhanced system performance
Benefits: - Improved overall system performance - Faster data access - Enhanced computing capabilities
Commercial Applications: Title: "Next-Generation Memory Solution for High-Performance Computing" This technology can be utilized in high-performance computing systems, data centers, and AI applications to enhance processing speed and efficiency, leading to improved performance and productivity in various industries.
Questions about the memory solution device: 1. How does the placement of the high-bandwidth memory and first memory die on the logic die impact system performance? 2. What are the potential drawbacks of integrating different types of memory dies in the memory solution device?
Original Abstract Submitted
a memory solution device may include a logic die, a high-bandwidth memory, and a first memory die. the logic die may be a central processing unit or an accelerator, and may include a first surface. the high-bandwidth memory die may be located on the first surface at a first predetermined location. the first memory die may be located on the first surface at a second predetermined location that is different from the first predetermined location. the first memory die may be a read-only memory, a random access memory, a non-volatile memory, or a combination thereof.
