Samsung electronics co., ltd. (20240315003). CAPACITOR AND MEMORY DEVICE simplified abstract
Contents
CAPACITOR AND MEMORY DEVICE
Organization Name
Inventor(s)
Jaehyoung Choi of Hwaseong-si (KR)
CAPACITOR AND MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315003 titled 'CAPACITOR AND MEMORY DEVICE
The abstract describes a patent application for a capacitor and a DRAM device, with a dielectric layer structure containing zirconium oxide and hafnium oxide.
- Lower electrode in the capacitor
- Dielectric layer structure with first zirconium oxide layer, hafnium oxide layer, and second zirconium oxide layer
- Upper electrode on the dielectric layer structure
- Hafnium oxide layer with tetragonal or orthorhombic crystal phase
Potential Applications: - Memory devices - Integrated circuits - Electronic devices requiring capacitors with high dielectric constant
Problems Solved: - Enhancing the performance of capacitors in electronic devices - Improving the efficiency of DRAM devices
Benefits: - Increased storage capacity in memory devices - Enhanced reliability and stability of electronic devices - Improved overall performance of integrated circuits
Commercial Applications: Title: "Advanced Capacitors for Enhanced Electronic Devices" This technology can be utilized in the production of memory modules, computer processors, and other electronic components to improve their performance and efficiency.
Questions about the technology: 1. How does the use of hafnium oxide in the dielectric layer structure improve the performance of the capacitor? - The hafnium oxide layer enhances the dielectric properties of the capacitor, leading to increased efficiency and reliability. 2. What are the potential drawbacks of using zirconium oxide and hafnium oxide in the dielectric layer structure? - While these materials offer improved performance, they may also increase production costs due to their specialized properties.
Original Abstract Submitted
a capacitor and a dram device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
