Samsung electronics co., ltd. (20240313071). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313071 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application consists of first channel patterns positioned next to each other, a first gate electrode that overlaps with one of the first channel patterns, first source/drain patterns located between the first channel patterns, and a first active contact connected to a side surface of each of the first source/drain patterns. The crystal plane of the side surface of each of the first source/drain patterns is a {100} plane.
- First channel patterns positioned adjacent to each other
- First gate electrode overlapping with one of the first channel patterns
- First source/drain patterns located between the first channel patterns
- First active contact in contact with a side surface of each of the first source/drain patterns
- Crystal plane of the side surface of each of the first source/drain patterns is a {100} plane
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits
Problems Solved: - Enhancing semiconductor device performance - Improving efficiency in electronic devices
Benefits: - Increased functionality in semiconductor devices - Enhanced performance in electronic applications
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the crystal plane of the side surface of the source/drain patterns impact the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production processes?
Original Abstract Submitted
a semiconductor device includes first channel patterns adjacent to each other, a first gate electrode that overlaps with one of the first channel patterns, first source/drain patterns between the first channel patterns, and a first active contact in contact with a side surface of each of the first source/drain patterns. a crystal plane of the side surface of each of the first source/drain patterns is one of {100} planes.
