Samsung electronics co., ltd. (20240306400). SEMICONDUCTOR MEMORY DEVICE simplified abstract
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SEMICONDUCTOR MEMORY DEVICE
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SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240306400 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of first conductive lines on a substrate, selection transistors connected to the ends of these lines, and transistors with different gate widths.
- The device has first conductive lines running parallel on a substrate, each with opposite end portions.
- First selection transistors are connected to the first end portions of the conductive lines.
- Second selection transistors are connected to the second end portions of the conductive lines.
- The first selection transistors have a larger gate width compared to the second selection transistors.
Potential Applications: - This technology can be used in various memory devices such as DRAM, SRAM, and Flash memory. - It can also be applied in computing systems, mobile devices, and other electronic devices requiring memory storage.
Problems Solved: - Provides a more efficient and compact way to store and retrieve data in semiconductor memory devices. - Helps improve the overall performance and reliability of memory systems.
Benefits: - Increased data storage capacity. - Faster data access and retrieval. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be utilized in the production of memory chips for consumer electronics, servers, and data centers, leading to improved data processing speeds and efficiency in various industries.
Questions about the technology: 1. How does the gate width of the transistors impact the performance of the semiconductor memory device? 2. What are the potential cost implications of implementing this technology in memory chip production?
Original Abstract Submitted
a semiconductor memory device includes: first conductive lines provided on a substrate and extending in a first direction in parallel, each of the first conductive lines including a first end portion and a second end portion that are opposite to each other, the first direction being parallel to a top surface of the substrate; first selection transistors respectively connected to the first end portions of the first conductive lines; and second selection transistors respectively connected to the second end portions of the first conductive lines. each of the first selection transistors may have a first gate width. each of the second selection transistors may have a second gate width smaller than the first gate width.
