Samsung electronics co., ltd. (20240304704). INTEGRATED CIRCUIT DEVICE simplified abstract

INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Subin Lee of Suwon-si (KR)

Hyunjun Lim of Suwon-si (KR)

Jeonghyeon Lee of Suwon-si (KR)

Hakjong Lee of Suwon-si (KR)

Taeho Cha of Suwon-si (KR)

Seunghyeon Hong of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240304704 titled 'INTEGRATED CIRCUIT DEVICE

The abstract describes an integrated circuit device with fin-type active areas on a substrate, gate structures intersecting the active areas, an interlayer insulating layer, and an inter-gate cutting layer separating the gate structures.

• The device features fin-type active areas extending on a substrate in a first horizontal direction.
• Gate structures extend in a second horizontal direction intersecting the fin-type active areas and are spaced apart from each other in the first horizontal direction.
• An interlayer insulating layer covers the periphery of the gate structures.
• An inter-gate cutting layer made of an insulating material extends across the gate structures and the interlayer insulating layer in the first horizontal direction.
• The gate structures are separated by the inter-gate cutting layer, and their side surfaces overlap the fin-type active areas in a vertical direction.

1. 1. 1. Potential Applications

This technology can be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.

1. 1. 1. Problems Solved

This innovation addresses the need for more compact and efficient integrated circuit designs by optimizing the layout of active areas and gate structures.

1. 1. 1. Benefits

The benefits of this technology include enhanced functionality, increased integration density, and improved overall performance of integrated circuits.

1. 1. 1. Commercial Applications

This technology has significant commercial potential in the semiconductor market, particularly for manufacturers looking to produce cutting-edge integrated circuits for various electronic devices.

1. 1. 1. Questions about Integrated Circuit Device
         1. 1. How does the inter-gate cutting layer contribute to the efficiency of the integrated circuit device?

The inter-gate cutting layer helps to separate and isolate different gate structures, reducing interference and improving overall performance.

1. 1. 1. 1. 2. What advantages do fin-type active areas offer in comparison to other types of active areas?

Fin-type active areas provide better control over the flow of current and improve the overall efficiency of the integrated circuit device.

Original Abstract Submitted

provided is an integrated circuit device including a plurality of fin-type active areas each extending on a substrate in a first horizontal direction, a plurality of gate structures each extending in a second horizontal direction intersecting the plurality of fin-type active areas on the substrate and spaced apart from each other in the first horizontal direction, an interlayer insulating layer covering the periphery of the plurality of gate structures, and an inter-gate cutting layer formed of an insulating material and extending in the first horizontal direction across through the plurality of gate structures and the interlayer insulating layer. a first gate structure is separated from a second gate structure by the inter-gate cutting layer, and portions of respective side surfaces of the gate structures overlap the plurality of fin-type active areas in a vertical direction, the respective side surfaces of the gate structures extending in the first horizontal direction.