Samsung electronics co., ltd. (20240304623). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hanyoung Song of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304623 titled 'INTEGRATED CIRCUIT DEVICE
The patent application describes an integrated circuit device with two fin-type active regions, each with a gate line intersecting in different lateral directions and a gate cut insulating pattern between them.
- The device includes a first fin-type active region and a second fin-type active region on a substrate.
- A first gate line extends in a lateral direction on the first fin-type active region, while a second gate line is on the second fin-type active region.
- The gate cut insulating pattern separates the first and second gate lines.
- The width of a terminal gate portion adjacent to the gate cut insulating pattern is narrower than other portions of the gate lines.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enhances the integration and functionality of integrated circuits. - Helps in reducing power consumption and improving overall device performance.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced functionality and miniaturization of integrated circuits.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Device Performance This technology can be applied in the production of smartphones, tablets, computers, and other electronic devices, improving their speed and efficiency. It can also benefit the semiconductor industry by enabling the development of more advanced and compact integrated circuits.
Questions about Integrated Circuit Device Technology: 1. How does the width of the terminal gate portion impact the performance of the integrated circuit device?
The width of the terminal gate portion affects the conductivity and control of the device, influencing its overall efficiency and functionality.
2. What are the key advantages of using fin-type active regions in integrated circuit devices?
Fin-type active regions provide better control over the flow of current, leading to improved performance and reduced power consumption.
Original Abstract Submitted
an integrated circuit device includes a first fin-type active region and a second fin-type active region extending in a first lateral direction on a substrate, a first gate line extending in a second lateral direction intersecting the first lateral direction on the first fin-type active region, a second gate line apart from the first gate line in the second lateral direction on the second fin-type active region and extending along an extension line of the first gate line in the second lateral direction, and a gate cut insulating pattern between the first gate line and the second gate line, wherein, for at least one of the first gate line and the second gate line, a width of a terminal gate portion, which is adjacent to the gate cut insulating pattern, in the first lateral direction is less than a width of another portion in the first lateral direction.
