Samsung electronics co., ltd. (20240304513). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Anthony Dongick Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Young Woo Kim of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304513 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as an active pattern, field insulating film, gate structure, source/drain area, through-contact, buried pattern, backside wiring structure, and heat-dissipating structure.
- The active pattern is located on the first surface of the substrate and extends in a first direction.
- The gate structure is positioned on the active pattern and field insulating film, extending in a second direction intersecting the first direction.
- The source/drain area is on a side surface of the gate structure and contacts the active pattern.
- The through-contact extends in a third direction perpendicular to the first and second directions, passing through the field insulating film.
- The buried pattern in the substrate connects to the through-contact.
- The backside wiring structure on the second surface of the substrate is electrically connected to the buried pattern.
- The heat-dissipating structure in the substrate, adjacent to the buried pattern, fills a trench extending from the second surface into the substrate.
Potential Applications: - This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be utilized in automotive electronics, medical devices, and industrial equipment.
Problems Solved: - Provides efficient heat dissipation, improving the overall performance and reliability of the semiconductor device. - Enhances electrical connectivity and functionality of the device through innovative design features.
Benefits: - Improved heat management leads to increased longevity of the device. - Enhanced electrical connections result in better overall performance and functionality.
Commercial Applications: - This technology can be applied in the semiconductor industry for the development of advanced electronic devices with superior heat dissipation capabilities.
Questions about the technology: 1. How does the heat-dissipating structure in the substrate improve the performance of the semiconductor device? 2. What are the potential commercial implications of using this innovative semiconductor technology in various electronic devices?
Original Abstract Submitted
a semiconductor device includes an active pattern on a first surface of a substrate and extending in a first direction, a field insulating film on the first surface and a side surface of the active pattern, a gate structure on the active pattern and field insulating film and extending in a second direction intersecting the first direction, a source/drain area on a side surface of the gate structure and contacting the active pattern, and a through-contact extending in a third direction perpendicular to the first and second directions and extending through the field insulating film. the device further includes a buried pattern in the substrate contacting the through-contact, a backside wiring structure on a second surface of the substrate and electrically connected to the buried pattern, and a heat-dissipating structure in the substrate adjacent to the buried pattern. the heat-dissipating structure fills a trench extending from the second surface into the substrate.
