Samsung electronics co., ltd. (20240292608). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Hong Park of Hwaseong-si (KR)
Jae-Wha Park of Yongin-si (KR)
Moon Keun Kim of Hwaseong-si (KR)
Jung Ha Hwang of Gunpo-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240292608 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a semiconductor pattern with a horizontal portion parallel to the substrate surface and a vertical portion, a gate electrode on the horizontal portion, and an information storage element connected to the vertical portion.
- The semiconductor pattern has different thicknesses in the horizontal and vertical portions.
- The gate electrode extends in a direction different from the horizontal and vertical portions.
- The information storage element is connected to the vertical portion of the semiconductor pattern.
Potential Applications: - Memory storage in electronic devices - Data processing in computers and smartphones - High-speed data transfer in servers and networking equipment
Problems Solved: - Efficient memory storage in limited space - Enhanced data processing capabilities - Improved performance of electronic devices
Benefits: - Increased memory capacity - Faster data access and retrieval - Enhanced overall device performance
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be used in various electronic devices, such as smartphones, laptops, servers, and networking equipment, to improve memory storage capacity and data processing speed, leading to better overall performance and user experience.
Questions about Semiconductor Memory Devices: 1. How does the thickness variation in the semiconductor pattern impact the performance of the memory device?
- The thickness variation allows for efficient data storage and retrieval processes, enhancing the overall performance of the memory device.
2. What are the potential challenges in implementing this innovative semiconductor memory technology in commercial electronic devices?
- The challenges may include manufacturing complexities, cost considerations, and compatibility with existing device architectures.
Original Abstract Submitted
a semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.
