Samsung electronics co., ltd. (20240292598). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hongsung Moon of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240292598 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of active regions on a substrate, each containing first and second impurity regions, word lines, capping insulating patterns, bit lines, contact plugs, and data storages.
- Active regions on a substrate with first and second impurity regions
- Word lines extended in one direction with capping insulating patterns
- Bit lines extended in a direction crossing the word lines
- Contact plugs connected to the second impurity region
- Data storages on the contact plugs
- Word lines with first and second metal nitride layers
Potential Applications: - Memory storage in electronic devices - Data processing in computers and servers - High-speed data transfer in communication systems
Problems Solved: - Efficient data storage and retrieval - Improved performance of semiconductor memory devices - Enhanced reliability and durability of memory systems
Benefits: - Faster data access and processing speeds - Higher storage capacity in a compact device - Reduced power consumption for improved energy efficiency
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as: - Consumer electronics like smartphones and tablets - Data centers for cloud computing services - Automotive systems for in-vehicle data storage and processing
Questions about Semiconductor Memory Devices: 1. How does the use of metal nitride layers in word lines improve the performance of the memory device? 2. What are the key factors influencing the speed and efficiency of data storage and retrieval in this semiconductor memory device?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology to ensure optimal performance and compatibility with evolving electronic devices.
Original Abstract Submitted
a semiconductor memory device may include active regions defined on a substrate by a device isolation layer, each of the active regions including a first impurity region and a second impurity region, word lines on the active regions and extended in a first direction, capping insulating patterns covering top surfaces of the word lines, respectively, bit lines on the word lines and extended in a second direction crossing the first direction, contact plugs between the bit lines and connected to the second impurity region, and data storages on the contact plugs, respectively. each of the word lines may include a first metal nitride layer and a second metal nitride layer on the first metal nitride layer. a resistivity of the second metal nitride layer may be smaller than a resistivity of the first metal nitride layer.
