Samsung electronics co., ltd. (20240290915). SEMICONDUCTOR LIGHT-EMITTING DEVICE simplified abstract
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SEMICONDUCTOR LIGHT-EMITTING DEVICE
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SEMICONDUCTOR LIGHT-EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290915 titled 'SEMICONDUCTOR LIGHT-EMITTING DEVICE
The semiconductor light-emitting device described in the abstract includes a light-emitting structure and a wavelength conversion member on its upper surface. The wavelength conversion member has a first surface in contact with the light-emitting structure, a second surface opposite to the first surface, and a slanted sidewall adjacent to the first surface. A coating layer on the second surface of the wavelength conversion member consists of alternating layers of oxide and magnesium fluoride.
- Light-emitting structure with a wavelength conversion member on its upper surface
- Wavelength conversion member has a first surface, a second surface, and a slanted sidewall
- Coating layer on the second surface includes alternating layers of oxide and magnesium fluoride
- Second material layer (magnesium fluoride) is arranged at the uppermost surface of the coating layer
- Overall design aims to improve the efficiency and performance of the semiconductor light-emitting device
Potential Applications: - LED lighting - Display technology - Optical communication systems
Problems Solved: - Enhancing the efficiency of light emission - Improving color rendering capabilities - Increasing the overall performance of semiconductor light-emitting devices
Benefits: - Higher efficiency in light emission - Better color quality in lighting applications - Enhanced performance and longevity of the device
Commercial Applications: Title: Advanced Semiconductor Light-Emitting Devices for Improved Efficiency This technology can be utilized in various commercial applications such as LED lighting products, display screens, and optical communication systems. The improved efficiency and performance of these semiconductor light-emitting devices can lead to cost savings and enhanced user experience in these industries.
Questions about Semiconductor Light-Emitting Devices: 1. How does the design of the wavelength conversion member contribute to the overall efficiency of the light-emitting device? 2. What are the specific advantages of using magnesium fluoride in the coating layer of the wavelength conversion member?
Original Abstract Submitted
a semiconductor light-emitting device includes a light emitting structure, a wavelength conversion member arranged on an upper surface of the light emitting structure, the wavelength conversion member including a first surface in contact with the light emitting structure, a second surface opposite to the first surface, and a sidewall, wherein the first surface entirely covers the upper surface of the light emitting structure, and a portion of the sidewall adjacent to the first surface is slanted with respect to the first surface, and a coating layer arranged on the second surface of the wavelength conversion member, the coating layer including a first material layer and a second material layer alternately stacked on the second surface, wherein the first material layer includes an oxide, and the second material layer includes magnesium fluoride (mgf), wherein the second material layer is arranged at an uppermost surface of the coating layer.
