Samsung electronics co., ltd. (20240290888). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Gi-gwan Park of Hwaseong-si (KR)
Tae-young Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290888 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a unique structure with a fin-shaped active region protruding from the substrate, covered by a gate insulating film and a gate electrode, along with source/drain regions and a lower buffer layer.
- The device features a fin-shaped active region that extends from the substrate, providing increased surface area for improved performance.
- The gate insulating film and gate electrode cover the top surface and side walls of the fin-shaped active region, enhancing control over the flow of current.
- Insulating spacers on the side walls of the gate electrode help isolate and protect the active region.
- The source/drain regions, made of compound semiconductor material with atoms from different groups, are located on either side of the gate electrode for efficient electron flow.
- The lower buffer layer, also made of compound semiconductor material with atoms from different groups, ensures a smooth transition between the active region and the source/drain regions.
Potential Applications: - High-performance electronic devices - Advanced semiconductor technology - Next-generation integrated circuits
Problems Solved: - Enhanced control over current flow - Improved performance and efficiency - Better isolation and protection of active regions
Benefits: - Increased device performance - Enhanced electron flow control - Improved reliability and longevity
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the development of cutting-edge electronic devices such as smartphones, tablets, and computers, where high performance and efficiency are crucial. The market implications include the potential for faster and more reliable devices that can meet the demands of modern technology users.
Questions about the technology: 1. How does the unique structure of the fin-shaped active region contribute to the device's performance? 2. What are the advantages of using compound semiconductor materials with atoms from different groups in the source/drain regions?
Original Abstract Submitted
a semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. the source/drain regions include a compound semiconductor material including atoms from different groups. the lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.
