Samsung electronics co., ltd. (20240290855). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290855 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device in this patent application includes a field insulating layer that protrudes upwardly on an element isolation region, reducing the depth of a source/drain contact.
Key Features and Innovation:
- Field insulating layer protrudes upwardly on an element isolation region
- Reduces the depth of the source/drain contact
- Decreases difficulty in providing the source/drain contact
Potential Applications: This technology can be applied in the semiconductor industry for improving the design and fabrication of semiconductor devices.
Problems Solved:
- Reducing the depth of the source/drain contact
- Minimizing the difficulty in providing the source/drain contact
Benefits:
- Enhanced efficiency in semiconductor device fabrication
- Improved performance of semiconductor devices
- Simplified manufacturing process
Commercial Applications: This technology could be utilized in the production of various semiconductor devices, leading to cost savings and enhanced device performance in the market.
Questions about Semiconductor Device with Field Insulating Layer: 1. How does the protruding field insulating layer impact the overall design of the semiconductor device? 2. What specific challenges does reducing the depth of the source/drain contact address in semiconductor device fabrication?
Frequently Updated Research: Researchers are constantly exploring new ways to enhance semiconductor device performance through innovative design and fabrication techniques. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Original Abstract Submitted
a semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided. accordingly, a depth of a source/drain contact to be provided may be reduced, thereby reducing difficulty for providing the source/drain contact may be reduced.
