Samsung electronics co., ltd. (20240288265). SEMICONDUCTOR MEASUREMENT APPARATUS simplified abstract
Contents
SEMICONDUCTOR MEASUREMENT APPARATUS
Organization Name
Inventor(s)
Yasuhiro Hidaka of Yokohama-shi (JP)
SEMICONDUCTOR MEASUREMENT APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240288265 titled 'SEMICONDUCTOR MEASUREMENT APPARATUS
The semiconductor measurement apparatus described in the abstract includes a lighting unit with a light source and a light modulator, a first optical unit with an illumination polarizing element, a second optical unit with a beam splitter and a self-interference generator, a sensor to capture an original image, and a controller to process the image and determine critical dimensions of a structure in a sample.
- Lighting unit with a light source and light modulator to generate output light of selected wavelength bands.
- First optical unit with an illumination polarizing element to control the light path.
- Second optical unit with a beam splitter, objective lens, and self-interference generator for sample illumination and image capture.
- Sensor to output an original image representing an interference pattern.
- Controller to process the image and determine critical dimensions of the sample structure.
Potential Applications: - Semiconductor manufacturing for precise measurement of structures. - Quality control in the production of electronic devices. - Research and development in nanotechnology and microelectronics.
Problems Solved: - Accurate measurement of critical dimensions in semiconductor structures. - Enhanced imaging capabilities for detailed analysis. - Improved quality control processes in manufacturing.
Benefits: - Increased accuracy in critical dimension measurements. - Enhanced imaging for better analysis of semiconductor structures. - Streamlined quality control processes in semiconductor manufacturing.
Commercial Applications: Title: Advanced Semiconductor Measurement Apparatus for Precision Manufacturing This technology can be used in semiconductor fabrication facilities for quality control and research purposes. It can also be valuable in academic and industrial research labs focusing on nanotechnology and microelectronics.
Prior Art: Prior art related to this technology may include patents or research papers on interferometry, semiconductor metrology, and optical imaging techniques.
Frequently Updated Research: Researchers in the field of semiconductor metrology are constantly working on improving imaging techniques and measurement accuracy. Stay updated on journals and conferences related to semiconductor manufacturing and nanotechnology.
Questions about Semiconductor Measurement Apparatus: 1. How does the self-interference generator contribute to the measurement process? The self-interference generator helps create interference patterns that can be analyzed to determine critical dimensions of semiconductor structures.
2. What are the key advantages of using multiple wavelength bands in the lighting unit? Using multiple wavelength bands allows for more detailed analysis of the sample structure and enhances measurement accuracy.
Original Abstract Submitted
provided is a semiconductor measurement apparatus that includes: a lighting unit comprising a light source, and a light modulator configured to decompose a light output by the light source into a plurality of wavelength bands and generate an output light of at least two selected wavelength bands; a first optical unit comprising an illumination polarizing element disposed in a path of the output light; a second optical unit comprising a beam splitter, an objective lens configured to allow light having passed through the first optical unit to be incident onto a sample, and a self-interference generator disposed on a path of a reflected light; a sensor configured to output an original image representing an interference pattern of light having passed through the self-interference generator; and a controller configured to process the original image and determine a selected critical dimension of a structure included in the sample.
