Samsung electronics co., ltd. (20240282829). SEMICONDUCTOR DEVICES simplified abstract
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Young Woo Kim of Suwon-si (KR)
Kyoung Woo Lee of Suwon-si (KR)
Min Chan Gwak of Suwon-si (KR)
Sang Cheol Na of Suwon-si (KR)
Anthony Dongick Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282829 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes a substrate with first and second surfaces, a fin-type pattern protruding from the first surface, a source/drain pattern on the fin-type pattern, a source/drain contact, a contact connection via, a buried conductive pattern, and buried insulating liners.
- The device features a unique fin-type pattern that extends in a second direction from the substrate's first surface.
- The buried conductive pattern is electrically connected to the contact connection via and has first and second surfaces in the first direction.
- Buried insulating liners extend along the sidewalls and the first surface of the buried conductive pattern.
Potential Applications: - This technology can be applied in the semiconductor industry for advanced electronic devices. - It can enhance the performance and efficiency of integrated circuits.
Problems Solved: - Improved electrical connectivity and conductivity within semiconductor devices. - Enhanced structural integrity and functionality of electronic components.
Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced reliability and durability of electronic systems.
Commercial Applications: - This technology has potential commercial applications in the manufacturing of high-performance electronic devices. - It can be utilized in various industries requiring advanced semiconductor technology.
Questions about the technology: 1. How does the unique fin-type pattern contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of the buried conductive pattern in enhancing electrical connectivity within the device?
Original Abstract Submitted
a semiconductor device includes a substrate that has first and second surfaces opposite to each other in a first direction, a first fin-type pattern that protrudes in the first direction from the first surface of the substrate and extends in a second direction, a first source/drain pattern on the first fin-type pattern, a first source/drain contact on the first source/drain pattern, a contact connection via that extends in the first direction and is electrically connected to the first source/drain contact, a buried conductive pattern that is in the substrate, is electrically connected to the contact connection via, and has first and second surfaces opposite to each other in the first direction, the first surface of the buried conductive pattern facing the first source/drain contact, and first buried insulating liners that extend along sidewalls and along the first surface of the buried conductive pattern.