Samsung electronics co., ltd. (20240282705). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282705 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation: The semiconductor memory device described in the patent application consists of a cell region on a cell substrate and a peripheral circuit region on a peripheral circuit board connected to the cell region through bonding. The cell region includes multiple gate electrodes stacked on one side of the cell substrate, along with bypass and normal cell contact plugs and metal wirings for electrical connections.
- The semiconductor memory device features a unique structure with stacked gate electrodes and vertical cell contact plugs.
- The device includes metal wirings for electrical connections between the gate electrodes and peripheral circuit regions.
- The innovative design allows for efficient data storage and retrieval within the memory device.
- The bonding metal pairs create a bypass path for connecting different metal wirings within the device.
- This technology enhances the performance and reliability of semiconductor memory devices.
Potential Applications: This technology can be applied in various electronic devices requiring high-speed and reliable memory storage, such as smartphones, computers, and servers.
Problems Solved: The technology addresses the need for efficient data storage and retrieval in semiconductor memory devices, improving overall performance and reliability.
Benefits: The benefits of this technology include enhanced data storage capacity, faster data access speeds, and improved overall performance of electronic devices.
Commercial Applications: The technology can be commercially utilized in the production of high-performance electronic devices, leading to improved market competitiveness and customer satisfaction.
Prior Art: Readers interested in prior art related to this technology can explore research papers, patents, and industry publications on semiconductor memory devices and related technologies.
Frequently Updated Research: Researchers are continuously exploring new advancements in semiconductor memory technology, including novel materials, designs, and manufacturing processes to further improve device performance.
Questions about Semiconductor Memory Devices: 1. How does the innovative structure of this semiconductor memory device improve data storage efficiency? 2. What potential applications beyond consumer electronics could benefit from this technology?
Original Abstract Submitted
a semiconductor memory device comprising a cell region on a cell substrate, and a peripheral circuit region on a peripheral circuit board connected to the cell region in a bonding manner is provided. wherein the cell region comprises a plurality of gate electrodes sequentially stacked on a first side of the cell substrate, a first bypass cell contact plug extended in a vertical direction in an extended region connected to the first gate electrode, a normal cell contact plug extended in the vertical direction in the extended region and connected to the second gate electrode, a first metal wiring electrically connected to the first bypass cell contact plug and a second metal wiring on the first metal wiring and electrically connected to the first metal wiring, wherein the second metal wiring is connected with the fourth metal wiring through a first bypass path including a plurality of bonding metal pairs.
