Samsung electronics co., ltd. (20240276733). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyuncheol Kim of Suwon-si (KR)
Sanghyun Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240276733 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of a substrate with a semiconductor pattern that includes a source region, a drain region, and an intrinsic region. It also features first and second gate electrodes, a ferroelectric pattern, and a gate dielectric pattern.
- Source region with first conductivity type
- Drain region with second conductivity type
- Intrinsic region between source and drain regions
- First and second gate electrodes on intrinsic region
- Ferroelectric pattern between intrinsic region and gate electrodes
- Gate dielectric pattern between ferroelectric pattern and intrinsic region
Potential Applications: - Memory storage devices - Integrated circuits - Semiconductor technology
Problems Solved: - Enhancing memory storage capabilities - Improving semiconductor performance - Increasing data retention in memory devices
Benefits: - Faster data access - Higher memory density - Improved energy efficiency
Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive industry
Prior Art: Researchers can explore prior art related to semiconductor memory devices, ferroelectric patterns, and gate dielectric patterns to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory devices, ferroelectric materials, and gate dielectric technologies to enhance the performance of memory storage devices.
Questions about Semiconductor Memory Devices: 1. What are the key advantages of using ferroelectric patterns in semiconductor memory devices?
Ferroelectric patterns offer non-volatile memory storage capabilities, high speed, and low power consumption.
2. How does the gate dielectric pattern contribute to the overall performance of the semiconductor memory device?
The gate dielectric pattern helps in controlling the flow of charge between the source and drain regions, enhancing the efficiency of the device.
Original Abstract Submitted
a semiconductor memory device includes a substrate, a semiconductor pattern on the substrate and including a source region having a first conductivity type, a drain region having a second conductivity type, and an intrinsic region between the source region and the drain region, first and second gate electrodes on the intrinsic region, a ferroelectric pattern between the intrinsic region and the first and second gate electrodes, and a gate dielectric pattern between the ferroelectric pattern and the intrinsic region.
