Samsung electronics co., ltd. (20240276720). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kohji Kanamori of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240276720 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application consists of structures with insulation layers and semiconductor layers stacked alternately in a vertical direction, with an interlayer insulation layer between them. Gate electrodes are located in gate trenches passing through the interlayer insulation layer vertically, connecting to the semiconductor layers. Vertical insulation layers are present on the sidewalls of the gate trenches. Each gate electrode has first portions overlapping the insulation layers and second portions overlapping the semiconductor layers in the horizontal direction, with the first portions wider than the second portions.
- Structures with insulation and semiconductor layers stacked alternately in a vertical direction
- Gate electrodes in gate trenches passing through an interlayer insulation layer
- Vertical insulation layers on the sidewalls of the gate trenches
- Gate electrodes with overlapping portions on insulation and semiconductor layers
- First portions of gate electrodes wider than second portions
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient use of space in semiconductor memory devices - Improved connectivity between gate electrodes and semiconductor layers
Benefits: - Higher performance in memory devices - Increased efficiency in semiconductor manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Performance This technology can be used in the production of high-performance memory devices for various electronic applications, leading to improved functionality and speed in consumer electronics, data storage systems, and computing devices.
Questions about the technology: 1. How does the innovative design of the gate electrodes improve the performance of semiconductor memory devices? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
Frequently Updated Research: Researchers are continually exploring ways to enhance the efficiency and performance of semiconductor memory devices through novel design and material innovations. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
a semiconductor memory device includes structures including insulation layers and semiconductor layers alternately stacked in a vertical direction, the structures being spaced apart from one another in a horizontal direction; an interlayer insulation layer between the structures; gate electrodes respectively in gate trenches passing through the interlayer insulation layer in the vertical direction, between the structures, the gate electrodes connected to the semiconductor layers; and vertical insulation layers respectively on sidewalls of the gate trenches, wherein each gate electrode includes first portions overlapping the insulation layers in the horizontal direction and second portions overlapping the semiconductor layers in the horizontal direction, and a first width of each first portion in the horizontal direction is greater than a second width of each second portion in the horizontal direction.
