Samsung electronics co., ltd. (20240276719). VERTICAL MEMORY DEVICE simplified abstract
Contents
VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
Seungyoon Kim of Suwon-si (KR)
VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240276719 titled 'VERTICAL MEMORY DEVICE
The semiconductor device described in the abstract includes a complex structure involving various layers and patterns to enable its functionality.
- Lower circuit pattern on a substrate
- Common source plate (csp) on the lower circuit pattern
- Channel connection pattern on the csp
- Sacrificial layer structure on the csp
- Support layer on the channel connection pattern and sacrificial layer structure
- First and second gate electrode structures with gate electrodes on the support layer
- First channel extending through the first gate electrode structure, support layer, and channel connection pattern
- Contact plug extending through the second gate electrode structure, support layer, sacrificial layer structure, and csp
Potential Applications: - Advanced semiconductor devices - Electronics manufacturing - Integrated circuits
Problems Solved: - Enhancing the performance of semiconductor devices - Improving connectivity and functionality in electronic components
Benefits: - Increased efficiency and performance in electronic devices - Enhanced connectivity and integration of components
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronics Manufacturing This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, industrial equipment, and communication devices. The market implications include increased demand for advanced semiconductor components in various industries.
Questions about the technology: 1. How does this semiconductor device improve the overall performance of electronic devices? 2. What are the specific advantages of using a sacrificial layer structure in this semiconductor device design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology to understand how this innovation fits into the evolving landscape of electronic components and devices.
Original Abstract Submitted
a semiconductor device includes: a lower circuit pattern disposed on a substrate; a common source plate (csp) disposed on the lower circuit pattern; a channel connection pattern disposed on the csp; a sacrificial layer structure disposed on the csp and spaced apart from the channel connection pattern; a support layer disposed on the channel connection pattern and the sacrificial layer structure; first and second gate electrode structures including gate electrodes stacked on the support layer and spaced apart from each other; a first channel disposed on the csp, wherein the first channel extends through the first gate electrode structure, the support layer and the channel connection pattern; and a contact plug extending through the second gate electrode structure, the support layer, the sacrificial layer structure and the csp, wherein the contact plug is electrically connected to the lower circuit pattern.
