Samsung electronics co., ltd. (20240276713). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240276713 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a memory cell that extends in multiple directions and consists of various components such as transistors, charge storage elements, bit lines, selection lines, and gate lines.
- The memory cell extends in a first horizontal direction, a second horizontal direction, and a vertical direction.
- It includes a first transistor with a first channel structure and a second transistor with a second channel structure.
- A charge storage element is electrically connected to the second channel structure and adjacent to the first channel structure.
- A first bit line is connected to the first end of the first channel structure and extends in the second horizontal direction.
- A selection line is connected to the second end of the first channel structure and extends in the second horizontal direction.
- A second bit line is connected to the second end of the second channel structure and extends in the second horizontal direction.
- A gate line extends in the vertical direction.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems, servers, and other memory-intensive applications.
Problems Solved: - The memory device addresses the need for efficient and reliable data storage solutions. - It improves the performance and capacity of semiconductor memory devices.
Benefits: - Enhanced data storage capabilities. - Improved speed and efficiency in data retrieval. - Higher reliability and durability of memory cells.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Data Storage This technology can be commercially utilized in the production of consumer electronics, data centers, and other high-tech devices requiring advanced memory solutions. The market implications include increased demand for faster and more reliable memory devices in various industries.
Questions about Semiconductor Memory Devices: 1. How does the design of this memory cell contribute to its overall performance and efficiency? 2. What are the potential challenges in implementing this technology on a larger scale in commercial products?
Original Abstract Submitted
a semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. the memory cell includes a first transistor including a first channel structure, a second transistor including a second channel structure, a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction, a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction, a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction, and a gate line that extends in the vertical direction.
