Samsung electronics co., ltd. (20240274679). INTEGRATED CIRCUIT DEVICE simplified abstract
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INTEGRATED CIRCUIT DEVICE
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Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240274679 titled 'INTEGRATED CIRCUIT DEVICE
The patent application describes an integrated circuit device with a fin-type active structure, nanosheet stack, gate structure, source/drain structure, and vertical separation layer.
- The device includes a fin-type active structure elongated in a first horizontal direction.
- A nanosheet stack with nanosheets is positioned on the fin-type active structure.
- A gate structure extends between the nanosheets.
- A source/drain structure is located adjacent to the gate structure and faces the nanosheet stack.
- A vertical separation layer includes a silicon layer in contact with a silicide separation layer.
- The silicide separation layer is positioned between the source/drain structure and the nanosheet stack and gate structure.
- The silicon separation layer is located between the silicide separation layer and the nanosheet stack and gate structure.
- The source/drain structure contains a metal.
- The gate structure includes at least one sub-gate surrounding a nanosheet on the fin-type active structure.
Potential Applications: - Advanced semiconductor devices - High-performance computing systems - Next-generation electronics
Problems Solved: - Enhancing device performance and efficiency - Improving integration of components in integrated circuits
Benefits: - Increased speed and reliability of electronic devices - Reduction in power consumption - Enhanced functionality of integrated circuits
Commercial Applications: This technology could be utilized in the development of cutting-edge smartphones, tablets, laptops, and other consumer electronics. It also has potential applications in the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the technology: 1. How does the integration of nanosheets improve the performance of the integrated circuit device? 2. What are the specific advantages of using a fin-type active structure in this technology?
Original Abstract Submitted
an integrated circuit device may include a fin-type active structure elongated in a first horizontal direction, a nanosheet stack including nanosheets on the fin-type active structure, a gate structure extending between the nanosheets, a source/drain structure on the fin-type active structure at a position adjacent to the gate structure and facing the nanosheet stack in the first horizontal direction, a vertical separation layer including a silicon layer in contact with a silicide separation layer. the silicide separation layer may be between the source/drain structure and each of the nanosheet stack and the gate structure. the silicon separation layer may be between the silicide separation layer and each of the nanosheet stack and the gate structure. the source/drain structure may include a metal. the gate structure may include at least one sub-gate surrounding at least one nanosheet among the plurality of nanosheets on the fin-type active structure.
