Samsung electronics co., ltd. (20240268130). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungeun Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268130 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a lower bonding structure with a lower substrate, a lower dielectric structure, and a transistor, an upper bonding structure with an upper dielectric structure, an upper substrate, and a memory cell structure, a connection structure, and a first through via that connects the transistor to the memory cell structure.
- The semiconductor device features a unique structure with overlapping transistor and memory cell structures.
- The first through via penetrates the upper substrate and the upper dielectric structure, providing electrical connection between the transistor and the memory cell structure.
Potential Applications: - This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find use in the development of high-performance memory systems and integrated circuits.
Problems Solved: - The technology addresses the need for efficient electrical connections between different components in semiconductor devices. - It offers a solution for optimizing space utilization and improving overall device performance.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced integration and connectivity between different components. - Potential for increased efficiency and reliability in electronic systems.
Commercial Applications: - The technology could be valuable in the production of consumer electronics, telecommunications equipment, and computing devices. - It may have implications for the development of advanced semiconductor products in the market.
Prior Art: - Researchers and engineers interested in this technology may explore prior patents related to semiconductor device structures and interconnection methods.
Frequently Updated Research: - Stay informed about the latest advancements in semiconductor device fabrication techniques and materials to enhance the performance of future devices.
Questions about the Technology: 1. How does the unique structure of the semiconductor device improve its overall performance? 2. What are the potential challenges in implementing this technology in mass production?
Original Abstract Submitted
disclosed are semiconductor devices and their fabrication methods. the semiconductor device includes a lower bonding structure that includes a lower substrate, a lower dielectric structure on the lower substrate, and a transistor between the lower substrate and the lower dielectric structure, an upper bonding structure that includes an upper dielectric structure on the lower dielectric structure, an upper substrate on the upper dielectric structure, and a memory cell structure between the upper substrate and the upper dielectric structure, a connection structure on the upper bonding structure, and a first through via that electrically connects the transistor to the memory cell structure. the transistor overlaps the memory cell structure. the first through via penetrates the upper substrate and the upper dielectric structure.
