Samsung electronics co., ltd. (20240268098). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268098 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application includes a first active pattern protruding from a substrate, a gate structure with a gate insulation layer and a gate pattern laterally stacked on a first sidewall of the first active pattern, and first conductive patterns contacting the gate insulation layer and protruding from a sidewall of the gate structure.
- The gate pattern faces the first sidewall of the first active pattern and extends parallel to the upper surface of the substrate.
- The first conductive patterns may face second and third sidewalls of the first active pattern in the same direction and are spaced apart from the first active pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Improved integration and functionality of semiconductor devices. - Enhanced conductivity and performance of electronic components.
Benefits: - Increased efficiency and performance of electronic devices. - Enhanced reliability and durability of semiconductor components.
Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for the development of advanced electronic devices. - It can be utilized in the production of high-performance computing systems and mobile devices.
Questions about the technology: 1. How does the protrusion of the first active pattern impact the overall performance of the semiconductor device? 2. What are the specific advantages of the lateral stacking of the gate pattern on the first active pattern?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology and the integration of new materials for improved device performance.
Original Abstract Submitted
a semiconductor device includes a first active pattern protruding from a substrate; a gate structure including a gate insulation layer and a gate pattern laterally stacked on a first sidewall of the first active pattern, the gate pattern facing the first sidewall of the first active pattern and extending a first direction parallel to an upper surface of the substrate; and first conductive patterns contacting the gate insulation layer and protruding from a sidewall of the gate structure. the first conductive patterns may be disposed to face second and third sidewalls in the first direction of the first active pattern, and first conductive patterns may be spaced apart from the first active pattern.
