Samsung electronics co., ltd. (20240266445). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
Sangwook Kim of Seongnam-si (KR)
Kwanghee Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266445 titled 'SEMICONDUCTOR DEVICE
The semiconductor apparatus described in the patent application consists of multiple semiconductor devices, each containing a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer sandwiched between two electrodes. The conductive metal oxide layer is positioned between the ferroelectric layer and the semiconductor layer, all of which may contain a metal oxide material. The conductive metal oxide layer may consist of materials such as indium oxide, zinc oxide, tin oxide, or a combination thereof.
- Ferroelectric layer, conductive metal oxide layer, and semiconductor layer in each semiconductor device
- Conductive metal oxide layer positioned between ferroelectric and semiconductor layers
- Materials in conductive metal oxide layer include indium oxide, zinc oxide, tin oxide, or combinations
- Metal oxide composition in all layers of semiconductor devices
- Utilization of ferroelectric and conductive metal oxide layers in semiconductor technology
Potential Applications: - Memory devices - Sensors - Energy storage devices
Problems Solved: - Enhanced performance and efficiency of semiconductor devices - Improved data retention and processing capabilities
Benefits: - Increased speed and reliability in electronic devices - Lower power consumption - Extended lifespan of semiconductor components
Commercial Applications: Title: Advanced Semiconductor Devices with Ferroelectric and Metal Oxide Layers This technology can be utilized in the development of high-performance memory modules, sensors for various industries, and energy storage solutions. The market implications include improved electronic devices with faster processing speeds and lower energy consumption.
Questions about Semiconductor Apparatus with Ferroelectric and Metal Oxide Layers:
1. How do the ferroelectric and metal oxide layers contribute to the performance of semiconductor devices? The ferroelectric layer enables non-volatile memory storage, while the metal oxide layer enhances conductivity and efficiency in data processing.
2. What are the potential challenges in implementing this technology on a larger scale in commercial electronic devices? The challenges may include scalability of production processes, cost-effectiveness, and compatibility with existing semiconductor technologies.
Original Abstract Submitted
a semiconductor apparatus includes a plurality of semiconductor devices. the semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. the conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. the conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
