Samsung electronics co., ltd. (20240266350). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266350 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract consists of a complex structure involving lower and upper regions, active layers, and gate structures.
- Lower structure includes lower source/drain regions, lower active layers, and a lower gate structure.
- Upper structure includes upper source/drain regions, upper active layers, and an upper gate structure.
- The upper source/drain regions vertically overlap the lower source/drain regions.
- The upper active layers vertically overlap the lower active layers.
- The uppermost lower active layer and the lowermost upper active layer are in contact with the barrier layer.
Potential Applications: - This semiconductor device could be used in advanced electronic devices such as smartphones, tablets, and computers. - It may find applications in power management systems, sensors, and communication devices.
Problems Solved: - This technology addresses the need for more efficient and compact semiconductor devices. - It improves the performance and functionality of electronic devices.
Benefits: - Enhanced performance and efficiency in electronic devices. - Increased integration and miniaturization capabilities. - Improved reliability and durability of semiconductor components.
Commercial Applications: - The technology could be valuable for semiconductor manufacturers looking to produce cutting-edge electronic components. - It may have implications in the consumer electronics market, driving innovation and competitiveness.
Questions about the technology: 1. How does the vertical overlap of active layers in the upper and lower structures impact the performance of the semiconductor device? 2. What are the specific advantages of having the uppermost lower active layer and the lowermost upper active layer in contact with the barrier layer?
Original Abstract Submitted
a semiconductor device includes a lower structure; a barrier layer on the lower structure; and an upper structure on the barrier layer, wherein the lower structure includes lower source/drain regions; lower active layers spaced apart from each other, between the lower source/drain regions; and a lower gate structure and including portions below each of the lower active layers, wherein the upper structure includes upper source/drain regions and vertically overlapping the lower source/drain regions; upper active layers spaced apart from each other, between the upper source/drain regions, and vertically overlapping the lower active layers; and an upper gate structure, including portions on each of the upper active layers, and vertically overlapping the lower gate structure, and wherein the uppermost lower active layer of the lower active layers and the lowermost upper active layer of the upper active layers are in contact with the barrier layer.
