Samsung electronics co., ltd. (20240266287). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266287 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of various components arranged in a specific configuration on a substrate.
- First conductive lines are spaced apart from each other in a first direction on the substrate.
- Second conductive lines are spaced apart from the first conductive lines in a second direction.
- A gate electrode is positioned between the first and second conductive lines and extends in the first direction.
- A first selection gate electrode is located between the first conductive lines and the gate electrode, also extending in the first direction.
- Multiple channel patterns surround the side surface of the gate electrode, spaced apart from each other in the first direction.
- Additional channel patterns surround the side surface of the first selection gate electrode.
- A ferroelectric pattern is situated between the gate electrode and each of the channel patterns.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in memory devices, logic circuits, and other integrated circuits requiring high performance.
Problems Solved: - The design of this semiconductor device addresses the need for improved performance and efficiency in electronic devices. - It offers a solution for enhancing the functionality and reliability of semiconductor components.
Benefits: - Increased speed and efficiency in electronic devices. - Enhanced performance and reliability of semiconductor components. - Potential for miniaturization and integration of more functions in a smaller space.
Commercial Applications: Title: Advanced Semiconductor Device for High-Performance Electronics Description: This technology has the potential to revolutionize the semiconductor industry by enabling the development of faster, more efficient electronic devices. It could be utilized in a wide range of commercial applications, including consumer electronics, telecommunications, and computing.
Questions about the technology: 1. How does the arrangement of the components in this semiconductor device contribute to its overall performance? 2. What are the potential challenges in implementing this technology on a larger scale?
Original Abstract Submitted
a semiconductor device may include first conductive lines spaced apart from each other in a first direction on a substrate, second conductive lines spaced apart from the first conductive lines in a second direction, a gate electrode between the first and second conductive lines and extending in the first direction, a first selection gate electrode between the first conductive lines and the gate electrode and extending in the first direction, a plurality of channel patterns surrounding a side surface of the gate electrode and spaced apart from each other in the first direction, a plurality of first selection channel patterns surrounding a side surface of the first selection gate electrode and a ferroelectric pattern between the gate electrode and each of the channel patterns. the first selection channel patterns may be spaced apart from each other in the first direction and connected to the channel patterns, respectively.
