Samsung electronics co., ltd. (20240266148). SEMICONDUCTOR MANUFACTURING DEVICE simplified abstract

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SEMICONDUCTOR MANUFACTURING DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Min Su Lee of Suwon-si (KR)

Yeon Tae Kim of Suwon-si (KR)

Yon Joo Kang of Suwon-si (KR)

Yi Hwan Kim of Suwon-si (KR)

Won Ki Lee of Suwon-si (KR)

Hyeon Jin Jeon of Suwon-si (KR)

Hyeong Un Jeon of Suwon-si (KR)

SEMICONDUCTOR MANUFACTURING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240266148 titled 'SEMICONDUCTOR MANUFACTURING DEVICE

Simplified Explanation

The patent application describes a semiconductor manufacturing device with a support unit in a chamber and a showerhead between plasma regions. Gas supply units inject process gases into the plasma region through the showerhead, which has plasma penetration portions. Gas flow paths inject gases into different zones of the showerhead, diffusing them through cavities and spraying holes into the plasma region.

  • The semiconductor manufacturing device includes a support unit in a chamber.
  • A showerhead is positioned between first and second plasma regions.
  • Gas supply units inject first and second process gases into the second plasma region through the showerhead.
  • Plasma penetration portions in the showerhead allow plasma to pass through.
  • Gas flow paths direct the process gases into specific zones of the showerhead.
  • Cavities connected to the gas flow paths diffuse the gases.
  • Gas spraying holes release the gases into the plasma region.

Key Features and Innovation

  • Gas supply units inject process gases into the plasma region through the showerhead.
  • Plasma penetration portions in the showerhead allow plasma to pass through.
  • Gas flow paths direct gases into specific zones of the showerhead.
  • Cavities connected to the gas flow paths diffuse the gases.
  • Gas spraying holes release the gases into the plasma region.

Potential Applications

This technology can be used in semiconductor manufacturing processes to control the flow and diffusion of process gases in plasma regions.

Problems Solved

This technology addresses the need for precise control and distribution of process gases in semiconductor manufacturing devices.

Benefits

  • Improved efficiency in semiconductor manufacturing processes.
  • Enhanced control over the distribution of process gases in plasma regions.
  • Increased quality and consistency of semiconductor products.

Commercial Applications

  • Semiconductor manufacturing industry: This technology can be utilized in the production of various semiconductor devices, improving overall manufacturing processes and product quality.

Questions about Semiconductor Manufacturing Device

How does the diffusion of process gases through the cavities impact the plasma region?

The diffusion of process gases through the cavities helps to evenly distribute the gases in the plasma region, ensuring consistent and controlled reactions during the manufacturing process.

What are the key advantages of using a showerhead in semiconductor manufacturing devices?

Using a showerhead allows for precise injection and distribution of process gases in plasma regions, leading to improved efficiency and quality in semiconductor manufacturing processes.


Original Abstract Submitted

a semiconductor manufacturing device comprising a support unit in a chamber. a showerhead disposed between first and second plasma regions. first and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. the showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. first gas flow paths injecting the first process gas into a first zone of the showerhead. second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. first and second cavities connected to the first and second gas flow paths, respectively. the first and second cavities diffusing the first and second process gases, respectively. first and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.