Samsung electronics co., ltd. (20240251553). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Young Bong Shin of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251553 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor memory device described in the abstract features a stack structure on a substrate, gate electrode layers, insulating layers, a vertical structure with a vertical channel film, a channel insulating film, and a high-k film with different metal materials.
- The device includes gate electrode layers and insulating layers stacked alternately with each other.
- A vertical structure consists of a vertical channel film extending in a direction crossing the first direction.
- A channel insulating film is disposed on the vertical channel film with first areas adjacent to the insulating layers and second areas adjacent to the gate electrode layers.
- A high-k film is present on the channel insulating film, comprising a first high-k metal oxide film and a second high-k metal oxide film with different metal materials.
- The first high-k metal oxide film is between the first areas and the insulating layers, while the second high-k metal oxide film is between the second areas and the gate electrode layers.
Potential Applications: - This technology can be applied in the development of advanced semiconductor memory devices. - It can enhance the performance and efficiency of memory storage systems in various electronic devices.
Problems Solved: - Improves the functionality and reliability of semiconductor memory devices. - Enhances the integration and miniaturization of memory components in electronic devices.
Benefits: - Increased memory storage capacity. - Improved data processing speed. - Enhanced overall performance of electronic devices.
Commercial Applications: - Memory storage devices in smartphones, tablets, and computers. - Data centers and servers for high-speed data processing.
Questions about the technology: 1. How does the use of different metal materials in the high-k film contribute to the performance of the semiconductor memory device? 2. What are the specific advantages of the vertical structure with a vertical channel film in this memory device design?
Original Abstract Submitted
a semiconductor memory device includes a stack structure on a substrate, extending in a first direction, and including gate electrode layers and insulating layers stacked alternately with each other, a vertical structure including a vertical channel film extending in a second direction crossing the first direction and a channel insulating film disposed on the vertical channel film and having first areas adjacent to the insulating layers and second areas adjacent to the gate electrode layers, and a high-k film on the channel insulating film. the high-k film includes a first high-k metal oxide film between the first areas and the insulating layers and in contact with the first areas and a second high-k metal oxide film between the second areas and the gate electrode layers and in contact with the second areas, and the first and second high-k metal oxide films include different metal materials.
