Samsung electronics co., ltd. (20240251545). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Seung Hee Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251545 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract features a unique structure that enhances integration and electrical characteristics. The device includes a bit line, first and second channel patterns, first and second word lines, and first and second capacitors.
- The first and second channel patterns contain a metal oxide pattern with indium (In), gallium (Ga), and tin (Sn), with the peak position of tin differing from that of gallium in the spatial composition distribution.
- The first word line is positioned between the first and second channel patterns, extending in one direction, while the second word line is placed between the channel patterns, extending in the opposite direction and spaced apart from the first word line.
- The first and second capacitors are connected to the first and second channel patterns, respectively, contributing to the overall functionality of the memory device.
Potential Applications: - This semiconductor memory device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems, servers, and other memory-intensive applications.
Problems Solved: - The device addresses the need for improved integration and electrical characteristics in semiconductor memory devices. - It offers a unique structure that enhances performance and reliability in memory storage applications.
Benefits: - Improved integration and electrical characteristics - Enhanced performance and reliability in memory storage - Potential for increased efficiency and speed in data processing
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Integration This technology can be utilized in the production of high-performance electronic devices, data storage systems, and memory-intensive applications. Its unique structure and improved electrical characteristics make it a valuable component in the semiconductor industry.
Questions about the technology: 1. How does the unique composition of the metal oxide pattern contribute to the performance of the semiconductor memory device? 2. What specific advantages does the placement of the word lines offer in terms of memory storage efficiency and speed?
Original Abstract Submitted
there is provided a semiconductor memory device having improved integration and electrical characteristics. the semiconductor memory device includes a bit line extending in a first direction on a substrate, a first channel pattern disposed on the bit line, a second channel pattern disposed on the bit line and spaced apart from the first channel pattern in the first direction, a first word line disposed between the first channel pattern and the second channel pattern extends in a second direction, a second word line disposed between the first channel pattern and the second channel pattern, extends in the second direction, and is spaced apart from the first word line in the first direction, and a first capacitor and a second capacitor disposed on and connected to the first channel pattern and the second channel pattern, respectively, wherein each of the first channel pattern and the second channel pattern includes a first metal oxide pattern including indium (in), gallium (ga) and tin (sn), and a position of a peak of tin is different from a position of a peak of gallium in a spatial composition distribution of the first metal oxide pattern.
