Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER
Organization Name
Inventor(s)
Jae Kyeong Jeong of Seoul (KR)
THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250180 titled 'THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER
The semiconductor device described in the patent application consists of a substrate, a stack structure with gate patterns and interlayer insulating films stacked alternately on the substrate, an insulating pillar extending within the stack structure, a polycrystalline metal oxide film along the sidewall of the insulating pillar, a liner film with a transition metal between the insulating pillar and the polycrystalline metal oxide film, and additional insulating films between the polycrystalline metal oxide film and the gate patterns.
- Insulating pillar within the stack structure
- Polycrystalline metal oxide film along the sidewall of the insulating pillar
- Liner film with a transition metal
- Tunnel insulating film, charge storage film, and blocking insulating film between the polycrystalline metal oxide film and the gate patterns
Potential Applications: - Advanced semiconductor devices - Memory storage technologies - Integrated circuits
Problems Solved: - Enhanced performance and reliability of semiconductor devices - Improved data storage capabilities
Benefits: - Increased efficiency in data processing - Higher storage capacity - Enhanced durability and longevity of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Data Storage This technology can be utilized in the development of high-performance memory storage devices, leading to improved data processing speeds and increased storage capacities. The market implications include advancements in the semiconductor industry, particularly in the field of memory storage technologies.
Questions about the technology: 1. How does the polycrystalline metal oxide film contribute to the performance of the semiconductor device? 2. What are the potential implications of using a transition metal in the liner film for semiconductor devices?
Original Abstract Submitted
the semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.
