Samsung electronics co., ltd. (20240250031). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250031 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a metal pattern on a semiconductor substrate, an etch stop layer covering the metal pattern, an interlayer dielectric layer, and a contact plug connecting to the metal pattern.
- The etch stop layer consists of a first insulation layer containing a metallic element and nitrogen, a second insulation layer containing carbon, and a third insulation layer without a metallic element and carbon.
- The contact plug penetrates the interlayer dielectric layer and the etch stop layer, establishing a connection with the metal pattern.
Potential Applications: - This technology can be used in the manufacturing of semiconductor devices for various electronic applications. - It can improve the performance and reliability of integrated circuits by providing a stable and efficient connection between metal patterns.
Problems Solved: - Enhances the durability and functionality of semiconductor devices by preventing etching damage to the metal pattern. - Ensures a secure and reliable electrical connection between different layers of the device.
Benefits: - Improved performance and longevity of semiconductor devices. - Enhanced connectivity and signal transmission efficiency. - Reduction in manufacturing defects and maintenance costs.
Commercial Applications: - This technology can be applied in the production of microprocessors, memory chips, and other electronic components. - It has potential uses in the telecommunications, automotive, and consumer electronics industries.
Questions about the technology: 1. How does the presence of nitrogen in the first insulation layer contribute to the performance of the semiconductor device? 2. What are the specific advantages of using a multi-layered etch stop layer in semiconductor manufacturing processes?
Original Abstract Submitted
a semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.
