Samsung electronics co., ltd. (20240249775). SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Sungmin Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249775 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
The semiconductor memory device described in the abstract includes a semiconductor substrate with a back-side insulating layer, external input/output conductive patterns, a circuit device, an internal input/output conductive pattern, a through-electrode structure, and a memory cell array region.
- The semiconductor substrate has a first surface and a second surface, with a back-side insulating layer below the second surface.
- Below the back-side insulating layer, there are external input/output conductive patterns.
- On the first surface of the semiconductor substrate, there is a circuit device with a gate electrode and a source/drain region.
- An internal input/output conductive pattern is also on the first surface, with at least a portion on the same level as the gate electrode.
- A through-electrode structure penetrates through the semiconductor substrate and the back-side insulating layer, connecting the internal input/output conductive pattern and the external input/output conductive pattern.
- A memory cell array region is located on a level higher than the circuit device on the first surface of the semiconductor substrate.
Potential Applications: - Memory devices - Semiconductor technology - Integrated circuits
Problems Solved: - Efficient memory storage - Improved connectivity in semiconductor devices
Benefits: - Enhanced memory performance - Increased data transfer speeds - Compact design for space-saving
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Performance Computing This technology can be utilized in: - Consumer electronics - Data centers - Automotive industry
Prior Art: Further research can be conducted in semiconductor memory devices, through-electrode structures, and memory cell array regions to explore existing technologies and innovations in the field.
Frequently Updated Research: Stay updated on advancements in semiconductor memory technology, through-electrode structures, and memory cell array regions for the latest developments in high-performance computing.
Questions about Semiconductor Memory Devices: 1. How does the through-electrode structure enhance the performance of the semiconductor memory device? 2. What are the key differences between this semiconductor memory device and traditional memory storage solutions?
Original Abstract Submitted
a semiconductor memory device includes: a semiconductor substrate having a first surface and a second surface opposing each other; a back-side insulating layer below the second surface of the semiconductor substrate; an external input/output conductive pattern below the back-side insulating layer; a circuit device including a gate electrode and a source/drain region, on the first surface of the semiconductor substrate; an internal input/output conductive pattern on the first surface of the semiconductor substrate, the internal input/output conductive pattern having at least a portion disposed on the same level as at least a portion of the gate electrode; a through-electrode structure penetrating through the semiconductor substrate and the back-side insulating layer and electrically connected to the internal input/output conductive pattern and the external input/output conductive pattern; and a memory cell array region disposed on a level higher than the circuit device, on the first surface of the semiconductor substrate.
