Samsung electronics co., ltd. (20240244846). SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kwangmin Park of Suwon-si (KR)
Dongsung Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244846 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a substrate, a stack structure with an interlayer insulating layer and a gate electrode, a channel layer, and a gate dielectric layer with a tunneling layer, a charge storage layer, and a blocking layer.
- The stack structure includes an interlayer insulating layer and a gate electrode.
- The channel layer extends through the stack structure in a direction crossing the substrate.
- The gate dielectric layer is positioned between the gate electrode and the channel layer.
- The gate dielectric layer consists of a tunneling layer, a charge storage layer, and a blocking layer.
- The tunneling layer contains a carbon-containing layer with carbon.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - This technology addresses the need for improved gate dielectric layers in semiconductor devices. - It provides a solution for enhancing the functionality of electronic components.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced reliability and durability of integrated circuits. - Potential cost savings in the manufacturing process.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Components This technology can be commercially applied in the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also benefit industries involved in semiconductor manufacturing and research.
Questions about Semiconductor Device Technology: 1. How does the inclusion of a carbon-containing layer in the tunneling layer improve the performance of the semiconductor device? - The carbon-containing layer in the tunneling layer enhances the conductivity and stability of the device, leading to improved overall performance.
2. What are the potential challenges in implementing this advanced gate dielectric layer technology in mass production? - Some challenges may include optimizing the manufacturing process, ensuring consistent quality control, and managing costs effectively.
Original Abstract Submitted
a semiconductor device includes a substrate; a stack structure including an interlayer insulating layer and a gate electrode which are alternately stacked on the substrate; a channel layer extending in a direction crossing the substrate through the stack structure; and a gate dielectric layer between the gate electrode and the channel layer, the gate dielectric layer including a tunneling layer, a charge storage layer, and a blocking layer sequentially on the channel layer, wherein the tunneling layer includes a carbon-containing layer including carbon, and the tunneling layer is positioned closer to the channel layer than it is to the charge storage layer.
