Samsung electronics co., ltd. (20240244843). SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
Organization Name
Inventor(s)
Kwang Ho Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244843 titled 'SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
The semiconductor device described in the patent application consists of multiple blocks on a substrate with trenches in between. Conductive patterns are formed inside these trenches, with the outermost trench having a higher lower end level than the adjacent trench. Each block includes insulating layers and gate electrodes stacked alternately, with pillars passing through them orthogonally to the substrate's upper surface.
- Insulating layers and gate electrodes are stacked alternately in each block.
- Pillars pass through the insulating layers and gate electrodes orthogonally to the substrate's upper surface.
- Trenches are formed between the blocks, with conductive patterns inside them.
- The lower end of the outermost trench is at a higher level than the adjacent trench.
- The design allows for efficient semiconductor device manufacturing.
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry
Problems Solved: - Efficient layout for semiconductor devices - Improved performance and functionality - Enhanced manufacturing processes
Benefits: - Higher efficiency in semiconductor device production - Improved performance and functionality of electronic devices - Enhanced reliability and durability
Commercial Applications: Title: Advanced Semiconductor Device Design for Enhanced Performance This technology can be applied in various commercial sectors such as: - Consumer electronics - Telecommunications - Automotive industry
Questions about the technology: 1. How does the design of the semiconductor device contribute to its overall performance? 2. What are the key advantages of using pillars passing through insulating layers and gate electrodes in the device design?
Original Abstract Submitted
a semiconductor device includes a plurality of blocks on a substrate. trenches are disposed between the plurality of blocks. conductive patterns are formed inside the trenches. a lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.
