Samsung electronics co., ltd. (20240243125). INTEGRATED CIRCUIT DEVICES simplified abstract
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Seongyul Park of Suwon-si (KR)
Myoungho Kang of Suwon-si (KR)
Changhyeon Lee of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243125 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with fin-type active regions protruding from a substrate, gate pillars, and gate groups arranged in different horizontal directions.
- Fin-type active regions protrude from the substrate in a first horizontal direction.
- Gate pillars extend in the first horizontal direction on the substrate.
- Gate groups are arranged in a second horizontal direction on the fin-type active regions.
- Each gate group includes multiple gate patterns spaced apart in the second horizontal direction.
- Gate patterns extend in the second horizontal direction and may include dummy gate patterns at the ends.
- Dummy gate patterns are in contact with and connected to the gate pillars.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Enhancing the performance of integrated circuits - Improving the efficiency of semiconductor devices
Benefits: - Increased functionality of integrated circuits - Enhanced reliability of electronic devices
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be used in various commercial applications such as mobile devices, computers, and automotive electronics, leading to faster and more efficient electronic devices in the market.
Questions about the technology: 1. How does the integration of gate pillars and gate groups improve the performance of the integrated circuit device? 2. What are the specific advantages of using fin-type active regions in semiconductor manufacturing?
Frequently Updated Research: Researchers are continually exploring new materials and designs to further improve the efficiency and performance of integrated circuit devices. Stay updated on the latest advancements in semiconductor technology for potential future applications.
Original Abstract Submitted
an integrated circuit device may include fin-type active regions protruding from a surface of a substrate and extending in a first horizontal direction, at least one gate pillar on the substrate and extending in the first horizontal direction, and a plurality of gate groups arranged in a second horizontal direction on the plurality of fin-type active regions. each of the plurality of gate groups may include a plurality of gate patterns spaced apart from each other in the second horizontal direction. each of the plurality of gate patterns may extend in the second horizontal direction. the plurality of gate patterns each may include at least one dummy gate pattern on at least one end of a corresponding one of the plurality of gate groups in the second horizontal direction. the at least one dummy gate pattern may be in contact with and connected to the at least one gate pillar.