Samsung electronics co., ltd. (20240243020). VERTICAL NON-VOLATILE MEMORY DEVICE simplified abstract
Contents
VERTICAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243020 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE
The abstract describes a vertical non-volatile memory device with a unique structure.
- Memory cell region with overlapping gate lines and insulating layer
- Extension region with stepped connection portions and raised pads
- Peripheral circuit structure with wiring layer and through type cell contact pattern
- Through type cell contact monitoring pattern in the extension region
Potential Applications: - Data storage devices - Embedded systems - Consumer electronics
Problems Solved: - Efficient data storage in a compact space - Improved memory cell connectivity
Benefits: - Higher memory density - Enhanced data transfer speeds - Reduced power consumption
Commercial Applications: Title: Vertical Non-Volatile Memory Device for High-Density Data Storage This technology can be utilized in the production of high-capacity storage devices for various industries, including data centers, telecommunications, and automotive.
Questions about Vertical Non-Volatile Memory Device: 1. How does the unique structure of the memory cell region contribute to the device's performance? 2. What advantages does the extension region with stepped connection portions offer in terms of memory cell connectivity and data transfer efficiency?
Frequently Updated Research: Researchers are constantly exploring ways to further enhance the memory density and performance of vertical non-volatile memory devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
a vertical non-volatile memory device, including a memory cell region including a plurality of gate lines overlapping each other in a vertical direction, and an insulating layer insulating the plurality of gate lines from each other in the vertical direction, an extension region on one side of the memory cell region, the extension region including a plurality of stepped connection portions having a plurality of raised pads integrally connected to each of the plurality of gate lines, a peripheral circuit structure in a lower portion of the memory cell region and the extension region, the peripheral circuit structure including a peripheral circuit wiring layer, a through type cell contact pattern in the extension region penetrating the plurality of gate lines, the insulating layer, and the plurality of stepped connection portions, and a through type cell contact monitoring pattern in the extension region spaced from the through type cell contact pattern.
