Samsung electronics co., ltd. (20240242755). NON-VOLATILE MEMORY DEVICE simplified abstract
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NON-VOLATILE MEMORY DEVICE
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NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240242755 titled 'NON-VOLATILE MEMORY DEVICE
The abstract of the patent application describes a non-volatile memory device with a first semiconductor layer and a second semiconductor layer arranged vertically. The first semiconductor layer contains memory cells and metal lines, including first and second bit lines and a common source line tapping wire. The second semiconductor layer includes a page buffer circuit connected to the bit lines, with transistors and a guard ring for protection.
- Memory device with vertical arrangement of semiconductor layers
- First layer has memory cells and metal lines for data transfer
- Second layer includes page buffer circuit for managing data flow
- Transistors in the page buffer circuit connect to the bit lines
- Guard ring provides protection for the common source line tapping wire
Potential Applications: - Non-volatile memory devices in consumer electronics - Data storage in industrial applications - Embedded memory in automotive systems
Problems Solved: - Efficient data storage and retrieval in a compact device - Reliable data transfer between memory cells and external systems
Benefits: - Faster data access speeds - Enhanced data security with protection features - Compact design for space-saving in devices
Commercial Applications: Title: Non-Volatile Memory Devices for High-Speed Data Storage This technology can be used in smartphones, tablets, and other portable devices for fast and reliable data storage. It can also be integrated into industrial equipment for data logging and processing, as well as in automotive systems for enhanced performance.
Questions about Non-Volatile Memory Devices: 1. How does the vertical arrangement of semiconductor layers improve data storage efficiency? The vertical arrangement allows for more memory cells in a compact space, increasing storage capacity without significantly increasing the device's footprint.
2. What are the key advantages of using a guard ring in the page buffer circuit? The guard ring provides protection against electrical interference and helps maintain the integrity of data transfer within the memory device.
Original Abstract Submitted
a non-volatile memory device includes a first semiconductor layer and a second semiconductor layer arranged in the vertical direction. a first semiconductor layer includes a plurality of memory cells, and a plurality of metal lines extending in a first direction, and including first bit lines, second bit lines, and a common source line tapping wire between the first bit lines and the second bit lines. a second semiconductor layer includes a page buffer circuit connected to the first bit lines and the second bit lines, and the page buffer circuit includes first transistors arranged below the first bit lines and electrically connected to the first bit lines, second transistors arranged below the second bit lines and electrically connected to the second bit lines, and a first guard ring arranged below and overlapped the common source line tapping wire in the vertical direction and extending in the first direction.
