Samsung electronics co., ltd. (20240237353). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Younghwan Son of Hwaseong-si (KR)
Jeehoon Han of Hwaseong-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237353 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
The abstract describes a patent application for three-dimensional (3D) semiconductor memory devices. These devices include an electrode structure with gate electrodes stacked on a substrate, including electrode pad regions. A dummy vertical structure penetrates one of the electrode pad regions, consisting of a dummy vertical semiconductor pattern and a contact pattern extending towards the substrate.
- Gate electrodes stacked on a substrate
- Electrode pad regions within the gate electrodes
- Inclusion of a dummy vertical structure with a dummy vertical semiconductor pattern and a contact pattern
- Penetration of the dummy vertical structure into one of the electrode pad regions
- Contact pattern extending from the dummy vertical semiconductor pattern towards the substrate
Potential Applications: - Memory storage devices - Semiconductor manufacturing - Electronics industry
Problems Solved: - Increased memory storage capacity - Enhanced semiconductor device performance - Improved manufacturing processes
Benefits: - Higher memory density - Faster data access speeds - More efficient semiconductor memory devices
Commercial Applications: Title: "Innovative 3D Semiconductor Memory Devices for Enhanced Data Storage" This technology can be used in: - Consumer electronics - Data centers - Automotive electronics
Questions about 3D Semiconductor Memory Devices: 1. How do 3D semiconductor memory devices differ from traditional memory devices? 3D semiconductor memory devices offer higher memory density and improved performance compared to traditional memory devices. 2. What are the key advantages of incorporating a dummy vertical structure in semiconductor memory devices? The dummy vertical structure helps enhance memory storage capacity and device efficiency.
Original Abstract Submitted
three-dimensional (3d) semiconductor memory devices are provided. a 3d semiconductor memory device includes an electrode structure on a substrate. the electrode structure includes gate electrodes stacked on the substrate. the gate electrodes include electrode pad regions. the 3d semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. the dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.
