Samsung electronics co., ltd. (20240237351). SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Semiconductor Devices
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237351 titled 'SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
Simplified Explanation
The patent application describes a semiconductor device with gate electrodes stacked perpendicularly to the substrate, interlayer insulating layers, and channel structures passing through the gate electrodes.
- The semiconductor device includes gate electrodes stacked perpendicularly to the substrate.
- Interlayer insulating layers are alternately stacked with the gate electrodes.
- Channel structures pass through the gate electrodes.
- Each channel structure includes a channel layer, tunneling insulating layer, charge storage layers, and first blocking insulating layers.
- The first layer of the first blocking insulating layers is on the upper, lower, and side surfaces of the charge storage layers.
Key Features and Innovation
- Gate electrodes stacked perpendicularly to the substrate.
- Channel structures passing through the gate electrodes.
- Charge storage layers between the gate electrodes and the tunneling insulating layer.
- First blocking insulating layers on the charge storage layers.
Potential Applications
The technology can be applied in the semiconductor industry for advanced memory devices and integrated circuits.
Problems Solved
The technology addresses the need for improved semiconductor devices with efficient channel structures and charge storage layers.
Benefits
- Enhanced performance of semiconductor devices.
- Increased memory capacity and speed.
- Improved integration in integrated circuits.
Commercial Applications
The technology can be utilized in the production of high-performance memory devices and advanced integrated circuits, catering to the growing demand for faster and more efficient electronics in various industries.
Questions about Semiconductor Devices
What are the key components of a semiconductor device?
A semiconductor device typically includes gate electrodes, interlayer insulating layers, channel structures, and charge storage layers.
How does the technology of stacked gate electrodes improve semiconductor devices?
Stacked gate electrodes allow for more efficient channel structures and enhanced performance in semiconductor devices.
Original Abstract Submitted
semiconductor devices are provided. a semiconductor device includes gate electrodes on a substrate and stacked perpendicularly to an upper surface of the substrate. the semiconductor device includes interlayer insulating layers alternately stacked with the gate electrodes. moreover, the semiconductor device includes channel structures passing through the gate electrodes. each of the channel structures includes a channel layer extending perpendicularly to the upper surface of the substrate, a tunneling insulating layer on the channel layer, charge storage layers on the tunneling insulating layer in respective regions between the gate electrodes and a side surface of the tunneling insulating layer, and first blocking insulating layers on the charge storage layers, respectively. a first layer of the first blocking insulating layers is on an upper surface, a lower surface, and a side surface of a first layer of the charge storage layers.
