Samsung electronics co., ltd. (20240237349). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Un-Byoung Kang of Suwon-si (KR)
Hyunchul Jung of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237349 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The abstract describes a three-dimensional semiconductor memory device with a unique structure involving gate electrodes and interlayer insulating layers stacked in a specific pattern.
- The memory device includes a bottom structure with a semiconductor substrate, cell array region, and connection region, as well as a first stack of gate electrodes and interlayer insulating layers.
- On top of the bottom structure is a top structure with a second stack of gate electrodes and interlayer insulating layers.
- The lengths of the gate electrodes in the first and second directions vary based on their distance in the first direction, which is perpendicular to the bottom surface of the semiconductor substrate.
- The second direction, parallel to the bottom surface, also influences the lengths of the gate electrodes in the second stack.
Potential Applications: - This technology can be used in high-density memory devices for various electronic devices. - It can enhance the performance and efficiency of semiconductor memory systems in data storage applications.
Problems Solved: - Addresses the need for increased memory density and performance in semiconductor devices. - Provides a more efficient and compact memory structure for electronic devices.
Benefits: - Improved memory capacity and performance. - Enhanced data storage capabilities in a smaller footprint. - Increased efficiency and speed in data processing.
Commercial Applications: "Three-Dimensional Semiconductor Memory Device for High-Density Data Storage"
Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in three-dimensional semiconductor memory devices to further improve performance and reliability.
Questions about Three-Dimensional Semiconductor Memory Devices: 1. How does the unique structure of this memory device contribute to its performance compared to traditional memory devices? - The unique structure allows for increased memory density and efficiency, leading to improved performance in data storage applications.
2. What are the potential challenges in implementing this technology on a larger scale in commercial electronic devices? - Challenges may include manufacturing complexities, cost considerations, and compatibility with existing systems.
Original Abstract Submitted
a three-dimensional semiconductor memory device may include a bottom structure and a top structure thereon. the bottom structure may include a semiconductor substrate including a cell array region and a connection region extending therefrom, and a first stack including first gate electrodes and first interlayer insulating layers alternately stacked on the semiconductor substrate. the top structure may include a second stack including second gate electrodes and second interlayer insulating layers alternately stacked on the first stack. respective lengths of the first gate electrodes in a second direction may decrease as a distance in a first direction increases, and respective lengths of the second gate electrodes in the second direction may increase as a distance in the first direction increases. the first direction may be perpendicular to a bottom surface of the semiconductor substrate, and the second direction may be parallel to the bottom surface of the semiconductor substrate.
