Samsung electronics co., ltd. (20240237347). METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seongsoo Moon of Suwon-si (KR)
SEUNGHAK Park of Suwon-si (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237347 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
The method described in the patent application involves the fabrication of a semiconductor device by stacking interlayer insulating layers and sacrificial layers on a substrate to form a mold structure, creating a dummy hole through the mold structure, forming a sacrificial pillar in the dummy hole, and then adding a second mold structure on top.
- Stacking of first interlayer insulating layers and sacrificial layers to form a mold structure
- Formation of a dummy hole through the mold structure
- Creation of a sacrificial pillar in the dummy hole by forming a recessed key region
- Addition of a second mold structure with a uniform thickness on the first mold structure and the recessed key region
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Improving the fabrication process of semiconductor devices - Enhancing the structural integrity of the devices - Increasing the efficiency of manufacturing processes
Benefits: - Enhanced device performance - Improved reliability - Cost-effective manufacturing
Commercial Applications: Title: Advanced Semiconductor Fabrication Method This technology can be utilized in the production of various semiconductor devices, leading to advancements in electronics, telecommunications, and other high-tech industries.
Questions about the technology: 1. How does the formation of sacrificial pillars impact the overall structure of the semiconductor device? 2. What are the potential challenges in implementing this fabrication method on an industrial scale?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the efficiency and performance of semiconductor devices. Stay updated on the latest advancements in the field to ensure the continued relevance of this technology.
Original Abstract Submitted
a method of fabricating a semiconductor device including: alternately stacking first interlayer insulating layers and first sacrificial layers on a substrate to form a first mold structure; forming a dummy hole penetrating the first mold structure; forming a dummy sacrificial pillar in the dummy hole, wherein the formation of the dummy sacrificial pillar includes forming a first recessed key region to expose a portion of an inner side surface of the dummy hole; and forming a second mold structure with a substantially uniform thickness on the first recessed key region and the first mold structure, wherein a top surface of the second mold structure has a second recessed key region corresponding to the first recessed key region.
