Samsung electronics co., ltd. (20240237341). NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Jung-Hwan Lee of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237341 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract of the patent application describes a non-volatile memory device with a unique channel structure that includes two stacking structures and two channel structures penetrating them. The second channel structure has a first portion with a decreasing or maintained width and a second portion with an increasing width as they extend towards the substrate.
- The non-volatile memory device includes a channel structure with two stacking structures and two channel structures.
- The second channel structure has a unique design with a width that changes as it extends towards the substrate.
- The first portion of the second channel structure has a decreasing or maintained width, while the second portion has an increasing width.
- This design allows for efficient data storage and retrieval in the non-volatile memory device.
- The unique channel structure enhances the performance and reliability of the memory device.
Potential Applications: - Non-volatile memory devices in electronic devices - Data storage in computers and servers - Industrial applications requiring reliable memory storage
Problems Solved: - Improved data storage efficiency - Enhanced performance and reliability of non-volatile memory devices
Benefits: - Faster data storage and retrieval - Increased reliability of memory devices - Enhanced overall performance of electronic devices
Commercial Applications: Title: Innovative Non-Volatile Memory Device for Enhanced Data Storage This technology can be used in various electronic devices, computers, servers, and industrial applications to improve data storage efficiency and overall performance.
Questions about the technology: 1. How does the unique channel structure of the non-volatile memory device improve data storage efficiency? 2. What are the potential commercial applications of this innovative memory device?
Original Abstract Submitted
a non-volatile memory device may include a channel structure including a first stacking structure, a second stacking structure, a first channel structure penetrating the first stacking structure, and a second channel structure penetrating the second stacking structure. the second channel structure includes a first portion having a width that decreases or is maintained as the first portion extends toward the substrate, and a second portion having a width that increases as the second portion extends toward the substrate.
