Samsung electronics co., ltd. (20240237340). SEMICONDUCTOR DEVICE HAVING COMMON SOURCE LINE LAYER, ELECTRONIC SYSTEM INCLUDING THE SAME, AND RELATED METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE HAVING COMMON SOURCE LINE LAYER, ELECTRONIC SYSTEM INCLUDING THE SAME, AND RELATED METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

JIWON Kim of Suwon-si (KR)

Ahreum Lee of Suwon-si (KR)

JOONYOUNG Kwon of Suwon-si (KR)

Dohyung Kim of Suwon-si (KR)

JUNHYOUNG Kim of Suwon-si (KR)

SUKKANG Sung of Suwon-si (KR)

SEMICONDUCTOR DEVICE HAVING COMMON SOURCE LINE LAYER, ELECTRONIC SYSTEM INCLUDING THE SAME, AND RELATED METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240237340 titled 'SEMICONDUCTOR DEVICE HAVING COMMON SOURCE LINE LAYER, ELECTRONIC SYSTEM INCLUDING THE SAME, AND RELATED METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a cell region with a channel structure and memory cells arranged in three dimensions, as well as various contact regions for plugs and pads.

• The device features memory cells arranged in three dimensions, optimizing space utilization and increasing storage capacity.
• Different contact regions are designated for specific functions, such as cell contact, common source line contact, and input/output contact.
• A word line cut region separates word lines of different cell regions, enhancing data integrity and preventing interference.
• The common source line layer connects the channel structure and the common source line contact plug, facilitating efficient data transfer.
• The input and output pad is connected to the input and output contact plug, enabling external communication with the device.

Potential Applications: - This technology can be used in various memory storage devices, such as solid-state drives and memory cards. - It can also be applied in microprocessors and other integrated circuits requiring efficient data storage and retrieval.

Problems Solved: - The device addresses the challenge of maximizing memory storage capacity in a limited space. - It also solves the issue of data interference between neighboring cell regions.

Benefits: - Increased memory storage capacity in a compact device. - Enhanced data integrity and efficiency in data transfer. - Improved overall performance of semiconductor devices.

Commercial Applications: Title: Advanced Semiconductor Memory Device for High-Capacity Storage This technology has significant commercial potential in the consumer electronics industry, particularly in the development of high-capacity storage devices for smartphones, tablets, and other portable devices. It can also be utilized in data centers and servers for efficient data processing and storage.

Questions about Semiconductor Memory Device: 1. How does the three-dimensional arrangement of memory cells benefit the overall performance of the device? - The three-dimensional arrangement optimizes space utilization, increasing storage capacity without significantly increasing the device's footprint. 2. What are the potential applications of this technology beyond memory storage devices? - This technology can also be applied in microprocessors and other integrated circuits requiring efficient data storage and retrieval.

Original Abstract Submitted

a semiconductor device includes a cell region in which a channel structure is disposed and memory cells arranged in three dimensions are disposed, a cell contact region in which a cell contact plug is disposed, a common source line contact region in which a common source line contact plug is disposed, an input and output contact region in which an input and output contact plug is disposed, a word line cut region separating word lines of the cell region from word lines of a neighboring cell region, a common source line layer connecting the channel structure and the common source line contact plug, and an input and output pad connected to the input and output contact plug. the common source line layer and the input and output pad are disposed at the same vertical level.