Samsung electronics co., ltd. (20240237334). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyoung Hwan Kim of Suwon-si (KR)
Young Woo Son of Suwon-Si (KR)
Young-Seung Cho of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237334 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation:
This patent application describes a semiconductor memory device that aims to enhance performance and reliability. The device includes a substrate with distinct cell and peripheral regions, a cell region isolation layer, and multiple cell gate structures. The active areas within the cell region are divided by the cell gate structures, with each active area containing a normal and a dummy active area.
- The semiconductor memory device features a unique design with cell gate structures and active areas that improve performance and reliability.
- The inclusion of normal and dummy active areas within the cell region allows for better functionality and efficiency.
- The cell region isolation layer effectively separates the cell region from the peripheral region, enhancing overall device operation.
- The substrate layout and structure contribute to the device's improved performance and reliability.
- The innovative design of the semiconductor memory device sets it apart from traditional memory devices in the market.
Potential Applications: The technology described in this patent application could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM. It can also be utilized in embedded systems, mobile devices, and computer systems where high-performance memory is essential.
Problems Solved: This technology addresses issues related to memory device performance, reliability, and efficiency. By optimizing the layout and structure of the semiconductor memory device, it aims to overcome challenges commonly faced in the semiconductor industry.
Benefits: The benefits of this technology include improved memory device performance, enhanced reliability, and increased efficiency. It also offers a unique design that sets it apart from existing memory devices, potentially leading to a competitive edge in the market.
Commercial Applications: Title: Enhanced Semiconductor Memory Device for Improved Performance This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced memory devices for various electronic applications. It could attract interest from memory manufacturers, technology companies, and device manufacturers looking to enhance the performance and reliability of their products.
Questions about the Technology: 1. What are the specific advantages of incorporating normal and dummy active areas in the cell region of the semiconductor memory device? 2. How does the cell region isolation layer contribute to the overall performance and reliability of the device?
Original Abstract Submitted
a semiconductor memory device with improved performance and reliability is provided. the semiconductor memory device includes a substrate having a cell region and a peripheral region, a cell region isolation layer that separates the cell region from the peripheral region, and a plurality of cell gate structures, each including a cell gate electrode that extends in a first direction. the cell region includes a plurality of active areas that extend in a second direction different from the first direction, and are between a respective cell element isolation layer and the cell region isolation layer. each of the active areas includes a first portion and a second portion separated by the cell gate structure, the second portion of the active area is on both sides of a respective one of the first portion of the active area. the active areas includes a normal active area and a dummy active area.
