Samsung electronics co., ltd. (20240237333). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Joon Song of Suwon-si (KR)
Dong-Sik Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240237333 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a complex structure involving various components such as bitlines, channel structures, wordlines, landing pads, and data storage patterns.
- Peripheral gate structure on a substrate
- Bitlines on the peripheral gate structure extending in a first direction
- Protruding insulating pattern with channel trenches in a second direction intersecting the first direction
- Channel structures on the bitlines in the channel trenches made of a metal oxide
- First wordlines and second wordlines on the channel structures, spaced apart in different directions
- Landing pads connected to the channel structures
- Pad separation patterns separating the landing pads
- First passage patterns made of an oxide-based insulating material
- Data storage patterns on the landing pads
Potential Applications: - This technology can be used in various types of semiconductor memory devices, such as DRAM or flash memory. - It can also be applied in other integrated circuit designs that require efficient data storage and retrieval.
Problems Solved: - The design addresses the need for increased memory density and improved performance in semiconductor memory devices. - It provides a solution for optimizing space utilization and enhancing data storage capabilities.
Benefits: - Higher memory capacity in a compact form factor - Improved data access speeds and overall device performance - Enhanced reliability and durability of the memory device
Commercial Applications: Title: Advanced Semiconductor Memory Device for High-Performance Applications This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance memory solutions for various electronic devices. The market implications include increased demand for faster and more efficient memory components in smartphones, computers, and other consumer electronics.
Questions about Semiconductor Memory Device: 1. How does the protruding insulating pattern contribute to the overall performance of the memory device? The protruding insulating pattern helps in organizing the various components of the memory device, such as the channel structures and landing pads, in a structured and efficient manner, leading to improved data storage and retrieval capabilities.
2. What are the key advantages of using metal oxide in the channel structures of the memory device? Metal oxide offers high conductivity and stability, making it an ideal material for the channel structures in semiconductor memory devices. It ensures reliable data storage and efficient operation of the device.
Original Abstract Submitted
disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
