Samsung electronics co., ltd. (20240234343). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
NOH YEONG Park of Suwon-si (KR)
BEOMJIN Park of Hwaseong-si (KR)
DONG IL Bae of Seongnam-si (KR)
Sangwon Baek of Hwaseong-si (KR)
HYUN-SEUNG Song of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234343 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with two regions and a first active pattern on one of the regions. The first active pattern consists of first source/drain patterns and a first channel pattern with multiple semiconductor patterns stacked on the substrate. Additionally, there is a first gate electrode on the first channel patterns and a supporting pattern on the side surfaces of the semiconductor patterns to connect them.
- The semiconductor device features a unique configuration with stacked semiconductor patterns and supporting patterns to enhance connectivity.
- The inclusion of source/drain patterns and channel patterns allows for efficient electron flow within the device.
- The gate electrode on the channel patterns helps control the flow of electrons through the semiconductor device.
- The supporting pattern on the side surfaces of the semiconductor patterns ensures structural integrity and connectivity.
- This innovative design may lead to improved performance and efficiency in semiconductor devices.
Potential Applications: - This technology could be applied in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers. - It may also find use in the development of high-speed processors and memory chips for various computing applications.
Problems Solved: - Enhances electron flow and connectivity within semiconductor devices. - Improves structural integrity and performance of electronic components. - Offers a more efficient design for advanced electronic devices.
Benefits: - Increased performance and efficiency in semiconductor devices. - Enhanced structural integrity and connectivity. - Potential for developing faster and more reliable electronic components.
Commercial Applications: The technology could have significant commercial applications in the semiconductor industry, leading to the development of faster and more efficient electronic devices. This innovation may attract interest from manufacturers looking to improve the performance of their products and stay competitive in the market.
Questions about the technology: 1. How does the supporting pattern on the side surfaces of the semiconductor patterns improve connectivity? 2. What potential impact could this innovative design have on the semiconductor industry in terms of performance and efficiency?
Original Abstract Submitted
a semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. the first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. the semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.
